Indium Gallium Nitride (InGaN) Solar Cell

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: W31P4Q-09-C-0397
Agency Tracking Number: 08SB2-0796
Amount: $98,450.00
Phase: Phase I
Program: SBIR
Awards Year: 2009
Solicitation Year: 2008
Solicitation Topic Code: SB082-052
Solicitation Number: 2008.2
Small Business Information
21W625 Huntington Rd, Glen Ellyn, IL, 60137
DUNS: 796693047
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Ryan Ahern
 Managing Director
 (630) 379-6175
Business Contact
 Ryan Ahern
Title: Managing Director
Phone: (630) 379-6175
Email: ryan.ahern@illinois-applied-researc
Research Institution
This SBIR Phase I project, under topic SB082-052, is directed toward design, epitaxial growth , fabrication and characterization of InGaN solar cells. InGaN thin films grown by solid source molecular beam epitaxy (MBE) will be used to fabricate photonic crystal based high efficiency solar cells. Much more efficient solar cells are possible as a result of photonic crystals that more efficiently capture and use light. InGaN, with varying In composition,can cover more than 60% of the solar spectrum. With such extensive absorption in the infrared, visible and near UV, InGaN is a perfect candidate for fabricating high performance solar cells for commercial applications. The innovation in this project is derived from the fact that the proposed combination of high quality MBE grown InGaN and photonic crystals are expected to provide higher efficiency solar cells. The Phase I will have three primary objectives – (i) MBE growth of high quality InGaN with lower cut off around 2eV; (ii) Design & fabrication of 2D photonic crystals with InGaN thin films; and (iii) design a preliminary InGaN photonic crystal based solar cell. The groups, Illinois Applied Research Associates (IARA) Inc. and University of Notre Dame, South Bend, IN, have complimentary expertise on device design ( IARA Inc. ) , materials growth (Notre Dame), Fabrication & Characterization (IARA Inc.). University of Notre Dame will grow InGaN thin films by MBE and IARA will focus on device/photonic crystal design and fabrication. Characterization will also be done by IARA. University of Notre Dame will also participate in basic materials and optical characterization of InGaN thin films

* Information listed above is at the time of submission. *

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