Highly Integrated Silicon (Si)-based RF electronics

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: W31P4Q-09-C-0227
Agency Tracking Number: 08SB2-0714
Amount: $98,994.00
Phase: Phase I
Program: SBIR
Awards Year: 2009
Solicitation Year: 2008
Solicitation Topic Code: SB082-044
Solicitation Number: 2008.2
Small Business Information
15700 Logarto Lane, Burnsville, MN, 55306
DUNS: 825606457
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: Y
Principal Investigator
 Frank Lucchesi
 President
 (952) 465-6009
 advancedtechegrg@comcast.net
Business Contact
 Frank Lucchesi
Title: President
Phone: (952) 465-6009
Email: advancedtechegrg@comcast.net
Research Institution
N/A
Abstract
ATE’s unique partnership with the University of Minnesota plans to exploits applied and fundamental research, respectively, to achieve unprecedented levels of integration for highly complex RF microwave, mm-wave and analog/digital/mixed-signal modules using Silicon Complementary Metal Oxide Semiconductor (CMOS) technology to support emerging DoD-critical applications such as wafer-scale phase array mono-static radars, bi-static radars, MIMO radars, direction finding (DF) signals intelligence (SIGINT), highly-integrated electronic warfare systems, or compact sensing systems.. In Phase I, ATE and the University of Minnesota will focus on application research to establish key performance parameters such as phase noise, phase shifter resolution/accuracy, linear dynamic range, channel isolation, etc. and analyze the feasibility of the proposed integration scheme and RF/mixed signal circuits that will result in revolutionary capabilities or superior performance which cannot be achieved by current III-V technologies. Simulation and/or basic experiments, expected RF performance, integration level (RF and digital transistor counts), and required integration technologies (3D integration, etc.) of the proposed circuits will be presented and discussed including proposed realistic fabrication technologies or necessary technology developments to realize the target RF/mixed signal circuits for the next phases.

* Information listed above is at the time of submission. *

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