You are here

SBIR Phase I: Advanced Polymer resists for Extreme Ultraviolet (EUV) Nanolithography

Award Information
Agency: National Science Foundation
Branch: N/A
Contract: 0839435
Agency Tracking Number: 0839435
Amount: $99,646.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: EL
Solicitation Number: NSF 08-548
Solicitation Year: N/A
Award Year: 2009
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
PO Box 13714
Durham, NC 27709
United States
DUNS: 826953304
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Monica Rabinovich
 (919) 941-6080
Business Contact
 Monica Rabinovich
Title: MS
Phone: (919) 941-6080
Research Institution

This Small Business Innovation Research (SBIR) project proposes to develop high photospeed, low line edge roughness, and low outgassing photoresist for extreme ultraviolet (EUV) lithography. Although EUV lithography at 13.5 nm wavelength has emerged as a promising candidate to meet the resolution requirements of the microelectronic industry roadmap, yet the development of novel photoresist materials with all of the required imaging properties is still challenging and is one of the major subjects of current nanolithography research. The critical requirements for EUV lithographic photoresist include high photospeed, high resolution, and low line edge roughness. The design of novel resist materials that can achieve all three characteristics is the key for the continued success of high resolution patterning in integrated circuit manufacturing.

* Information listed above is at the time of submission. *

US Flag An Official Website of the United States Government