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Deep Ultraviolet Light Sources for Water Purification and Surface Sterilization

Award Information
Agency: Department of Defense
Branch: Army
Contract: W911NF-19-P-0025
Agency Tracking Number: A18B-006-0229
Amount: $150,000.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: A18B-T006
Solicitation Number: 18.B
Solicitation Year: 2018
Award Year: 2019
Award Start Date (Proposal Award Date): 2018-12-21
Award End Date (Contract End Date): 2019-07-01
Small Business Information
39655 Eureka Drive
Newark, CA 94560
United States
DUNS: 184609621
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Zetian Mi
 (734) 764-3963
Business Contact
 Gene Napolitano
Phone: (510) 592-3000
Research Institution
 Regents of the University of Michigan
 Anthony L. Nielsen Anthony L. Nielsen
3003 S. State Street
Ann Arbor, MI 48109
United States

 (734) 936-0401
 Nonprofit College or University

This proposal is related to the development of high efficiency ultraviolet (UV) light emitting devices (LEDs) operating at 265 nm and 219 nm, which have the potential to replace conventional mercury lamps for many applications including dinsinfection and water purification. To date, the wall-plug efficiency of commercial LEDs operating at 265 nm is in the range of 2-3%, which has been limited by the presence of large densities of dislocations, poor p-type conduction and inefficient light extraction of conventional AlGaN quantum well structures. In this project, we aim to address these critical challenges by utilizing dislocation-free AlGaN nanostructures. We will investigate the design, epitaxy, fabrication and characterization of AlGaN nanowire ultraviolet LEDs that can operate relatively efficiently at 265 nm and 219 nm. The light extraction efficiency will be significantly enhanced by exploiting the coupling of photon modes through the nanowires in the light transmission regime of nanowire photonic crystal structures, and efficient p-type conduction will be realized through the formation of Mg impurity band in dislocation-free AlGaN nanostructures. Through these studies, we aim to demonstrate AlGaN LEDs with efficiency >5%, and to further identify the technical feasibility for achieving a wall-plug efficiency >15% for LEDs operating at ~265 nm.

* Information listed above is at the time of submission. *

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