Development of Boron Nitride -Based Capacitors for High-Energy Density High Temperature Applications

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$698,159.00
Award Year:
2003
Program:
SBIR
Phase:
Phase II
Contract:
N0017803C1007
Award Id:
63945
Agency Tracking Number:
01-0524
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
10814 Atwell Drive, Houston, TX, 77096
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
007189033
Principal Investigator:
Nacer Badi
Research Scientist
(713) 743-3621
nbadi@att.net
Business Contact:
David Starikov
President
(713) 743-3621
starik@ev1.net
Research Institution:
n/a
Abstract
High-energy density capacitors operating at excessive temperature are needed in several ballistic missile applications and DOD pulse power systems.In this Phase II project we will further develop advanced BN -based capacitors for high temperature high power applications. New efforts will be directed towards optimization of the desired energetic, electrical, thermal and frequency response propertiesof the capacitor device. Phase II proposal has attracted much interest from Raytheon and Lockheed Martin. This Project reflects also new commercially driven collaborations with Texas Components Corporation and Extreme Devices, Inc. At least three specificapplications will be addressed during the Phase II period:1. BN -based capacitors to support Raytheon and Lockheed Martin T/R modules.2. BN-based RF matching capacitors for SiC -based transistors.3. BN-based capacitor banks for high-temperature down-hole power modules.Upon the completion of the Phase II project, this technology will be readied for transfer to the commercial production market. High temperature capacitors will be made available as independent modules, which would be well specified, for functioning inspecific electrical and thermal ranges. The device will also be available for in-house applications and other commercial entities related to their integration into MEMS compatible devices.

* information listed above is at the time of submission.

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