High Efficiency InGaN Solar Cells

Award Information
Agency:
Department of Defense
Amount:
$749,998.00
Program:
SBIR
Contract:
FA9453-08-C-0111
Solitcitation Year:
2007
Solicitation Number:
2007.1
Branch:
Air Force
Award Year:
2008
Phase:
Phase II
Agency Tracking Number:
O071-ES4-1032
Solicitation Topic Code:
OSD07-ES4
Small Business Information
INTEGRATED MICRO SENSORS, INC.
10814 Atwell Drive, Houston, TX, 77096
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
007189033
Principal Investigator
 Chris Boney
 Research Scientist
 (713) 748-7926
 cboney@imsensors.com
Business Contact
 David Starikov
Title: Director of Research
Phone: (713) 748-7926
Email: dstarikov@imsensors.com
Research Institution
N/A
Abstract
The objective of this proposal is to develop InGaN photovoltaic devices with high conversion efficiencies for DOD concentrator terrestrial and AM0 orbital power generation. InGaN can be fabricated to span a wide bandgap range from ~0.7 to 3.4 eV and matches well to the solar emission. The combined thermal stability and radiation hardness higher than that of other solar cell materials currently in use, make InGaN a particularly attractive material for high concentration, high temperature, and space environments. The proposed work would result in two high performance products. One product will be an all-InGaN multijunction cell having high efficiencies with improved radiation hardness, excellent high temperature and chemical stability, and low toxicity. The second product will be an InGaN cell for synergistic near term incorporation into existing photovoltaic technologies as a tandem booster.

* information listed above is at the time of submission.

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