High Efficiency InGaN Solar Cells

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$749,998.00
Award Year:
2008
Program:
SBIR
Phase:
Phase II
Contract:
FA9453-08-C-0111
Agency Tracking Number:
O071-ES4-1032
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
INTEGRATED MICRO SENSORS, INC.
10814 Atwell Drive, Houston, TX, 77096
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
007189033
Principal Investigator:
Chris Boney
Research Scientist
(713) 748-7926
cboney@imsensors.com
Business Contact:
David Starikov
Director of Research
(713) 748-7926
dstarikov@imsensors.com
Research Institution:
n/a
Abstract
The objective of this proposal is to develop InGaN photovoltaic devices with high conversion efficiencies for DOD concentrator terrestrial and AM0 orbital power generation. InGaN can be fabricated to span a wide bandgap range from ~0.7 to 3.4 eV and matches well to the solar emission. The combined thermal stability and radiation hardness higher than that of other solar cell materials currently in use, make InGaN a particularly attractive material for high concentration, high temperature, and space environments. The proposed work would result in two high performance products. One product will be an all-InGaN multijunction cell having high efficiencies with improved radiation hardness, excellent high temperature and chemical stability, and low toxicity. The second product will be an InGaN cell for synergistic near term incorporation into existing photovoltaic technologies as a tandem booster.

* information listed above is at the time of submission.

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