InGaN High Temperature Photovoltaic Cells

Award Information
Agency: National Aeronautics and Space Administration
Branch: N/A
Contract: NNX09CD08P
Agency Tracking Number: 084269
Amount: $99,956.00
Phase: Phase I
Program: SBIR
Awards Year: 2009
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
10814 Atwell Drive, Houston, TX, 77096
DUNS: 007189033
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Chris Boney
 Principal Investigator
 (713) 748-7926
 cboney@imsensors.com
Business Contact
 David Starikov
Title: Director of Research
Phone: (713) 748-7926
Email: dstarikov@imsensors.com
Research Institution
N/A
Abstract
The objective of this Phase I project is to demonstrate InGaN materials are appropriate for high operating temperature single junction solar cells. Single junction InGaN test devices with bandgaps between 2.0 and 1.75 eV could provide power conversion in the 15-20% range while offering increased resistance to radiation damage. In this project, we will theoretically and experimentally optimize the doping profiles of p- and n-InGaN for high operating temperatures, fabricate test structures base on p-n junctions, and test the preliminary devices under concentrated sunlight and at temperatures from 100ýýC to 250ýýC. At the end of the Phase I, the technology will be at TRL 3.

* Information listed above is at the time of submission. *

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