InGaN High Temperature Photovoltaic Cells

Award Information
Agency:
National Aeronautics and Space Administration
Branch
n/a
Amount:
$99,956.00
Award Year:
2009
Program:
SBIR
Phase:
Phase I
Contract:
NNX09CD08P
Agency Tracking Number:
084269
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Integrated Micro Sensors, Inc.
10814 Atwell Drive, Houston, TX, 77096
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
007189033
Principal Investigator:
Chris Boney
Principal Investigator
(713) 748-7926
cboney@imsensors.com
Business Contact:
David Starikov
Director of Research
(713) 748-7926
dstarikov@imsensors.com
Research Institution:
n/a
Abstract
The objective of this Phase I project is to demonstrate InGaN materials are appropriate for high operating temperature single junction solar cells. Single junction InGaN test devices with bandgaps between 2.0 and 1.75 eV could provide power conversion in the 15-20% range while offering increased resistance to radiation damage. In this project, we will theoretically and experimentally optimize the doping profiles of p- and n-InGaN for high operating temperatures, fabricate test structures base on p-n junctions, and test the preliminary devices under concentrated sunlight and at temperatures from 100ýýC to 250ýýC. At the end of the Phase I, the technology will be at TRL 3.

* information listed above is at the time of submission.

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