InGaN High Temperature Photovoltaic Cells

Award Information
Agency:
National Aeronautics and Space Administration
Amount:
$99,956.00
Program:
SBIR
Contract:
NNX09CD08P
Solitcitation Year:
N/A
Solicitation Number:
N/A
Branch:
N/A
Award Year:
2009
Phase:
Phase I
Agency Tracking Number:
084269
Solicitation Topic Code:
N/A
Small Business Information
Integrated Micro Sensors, Inc.
10814 Atwell Drive, Houston, TX, 77096
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
007189033
Principal Investigator
 Chris Boney
 Principal Investigator
 (713) 748-7926
 cboney@imsensors.com
Business Contact
 David Starikov
Title: Director of Research
Phone: (713) 748-7926
Email: dstarikov@imsensors.com
Research Institution
N/A
Abstract
The objective of this Phase I project is to demonstrate InGaN materials are appropriate for high operating temperature single junction solar cells. Single junction InGaN test devices with bandgaps between 2.0 and 1.75 eV could provide power conversion in the 15-20% range while offering increased resistance to radiation damage. In this project, we will theoretically and experimentally optimize the doping profiles of p- and n-InGaN for high operating temperatures, fabricate test structures base on p-n junctions, and test the preliminary devices under concentrated sunlight and at temperatures from 100ýýC to 250ýýC. At the end of the Phase I, the technology will be at TRL 3.

* information listed above is at the time of submission.

Agency Micro-sites

US Flag An Official Website of the United States Government