High Bandgap InGaN Solar Cell

Award Information
Agency:
Department of Defense
Amount:
$98,956.00
Program:
SBIR
Contract:
W31P4Q-09-C-0168
Solitcitation Year:
2008
Solicitation Number:
2008.2
Branch:
Defense Advanced Research Projects Agency
Award Year:
2009
Phase:
Phase I
Agency Tracking Number:
08SB2-0797
Solicitation Topic Code:
SB082-052
Small Business Information
Integrated Micro Sensors, Inc.
10814 Atwell Drive, Houston, TX, 77096
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
007189033
Principal Investigator
 Chris Boney
 Research Scientist
 (713) 748-7926
 cboney@imsensors.com
Business Contact
 David Starikov
Title: Director of Research
Phone: (713) 748-7926
Email: dstarikov@imsensors.com
Research Institution
N/A
Abstract
The objective of this Phase I project is to demonstrate InGaN materials of high quality appropriate for single junction solar cells for DOD terrestrial power generation. A single junction InGaN cell with a bandgap between 2.4 and 2.8 eV combined with silicon or other solar cell technology in a multi-junction device could provide power conversion efficiency exceeding 40%. In order to do so, the InGaN material must have suitable doping levels and good transparency to sub-bandgap light. In this project, we investigate the feasibility of high bandgap InGaN solar cell by demonstrating the materials growth, documenting the material properties, and modeling the design for a prototype solar cell.

* information listed above is at the time of submission.

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