High Bandgap InGaN Solar Cell

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: W31P4Q-09-C-0168
Agency Tracking Number: 08SB2-0797
Amount: $98,956.00
Phase: Phase I
Program: SBIR
Awards Year: 2009
Solicitation Year: 2008
Solicitation Topic Code: SB082-052
Solicitation Number: 2008.2
Small Business Information
10814 Atwell Drive, Houston, TX, 77096
DUNS: 007189033
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Chris Boney
 Research Scientist
 (713) 748-7926
Business Contact
 David Starikov
Title: Director of Research
Phone: (713) 748-7926
Email: dstarikov@imsensors.com
Research Institution
The objective of this Phase I project is to demonstrate InGaN materials of high quality appropriate for single junction solar cells for DOD terrestrial power generation. A single junction InGaN cell with a bandgap between 2.4 and 2.8 eV combined with silicon or other solar cell technology in a multi-junction device could provide power conversion efficiency exceeding 40%. In order to do so, the InGaN material must have suitable doping levels and good transparency to sub-bandgap light. In this project, we investigate the feasibility of high bandgap InGaN solar cell by demonstrating the materials growth, documenting the material properties, and modeling the design for a prototype solar cell.

* Information listed above is at the time of submission. *

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