High Bandgap InGaN Solar Cell

Award Information
Agency:
Department of Defense
Branch
Defense Advanced Research Projects Agency
Amount:
$98,956.00
Award Year:
2009
Program:
SBIR
Phase:
Phase I
Contract:
W31P4Q-09-C-0168
Agency Tracking Number:
08SB2-0797
Solicitation Year:
2008
Solicitation Topic Code:
SB082-052
Solicitation Number:
2008.2
Small Business Information
Integrated Micro Sensors, Inc.
10814 Atwell Drive, Houston, TX, 77096
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
007189033
Principal Investigator:
Chris Boney
Research Scientist
(713) 748-7926
cboney@imsensors.com
Business Contact:
David Starikov
Director of Research
(713) 748-7926
dstarikov@imsensors.com
Research Institution:
n/a
Abstract
The objective of this Phase I project is to demonstrate InGaN materials of high quality appropriate for single junction solar cells for DOD terrestrial power generation. A single junction InGaN cell with a bandgap between 2.4 and 2.8 eV combined with silicon or other solar cell technology in a multi-junction device could provide power conversion efficiency exceeding 40%. In order to do so, the InGaN material must have suitable doping levels and good transparency to sub-bandgap light. In this project, we investigate the feasibility of high bandgap InGaN solar cell by demonstrating the materials growth, documenting the material properties, and modeling the design for a prototype solar cell.

* information listed above is at the time of submission.

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