INTELLIGENT EPITAXY TECHNOLOGY, INC.

Company Information
Address 1250 E. Collins Blvd.
Richardson, TX, -


Information

DUNS: 59803945

# of Employees: 25


Ownership Information

HUBZone Owned: N

Socially and Economically Disadvantaged: N

Woman Owned: N



Award Charts




Award Listing

  1. Large Diameter GaSb Substrate for Large Format SLS FPA Applications

    Amount: $100,000.00

    This Phase I SBIR effort will seek to develop high performance superlattice infrared focal plane array technology by establishing a 4"GaSb substrate manufacturing line based in Texas. Under this ...

    SBIRPhase I2011Department of Defense Missile Defense Agency
  2. Advanced Ternary SLS for 2-Color LW/LW FPA for Interceptor Seekers

    Amount: $100,000.00

    This Phase I SBIR effort will develop robust and high performance infrared detector technology based on GaSb-based Type II strained-layer superlattices (SLS). The advanced device design will be based ...

    SBIRPhase I2011Department of Defense Missile Defense Agency
  3. Development of Radiation Hardened Type II SLS for Smart IR FPA for Space Applications

    Amount: $100,000.00

    This Phase I SBIR effort will develop low dark-current and high radiation-hardness infrared detector technology based on unipolar barrier structure Type II strained-layer superlattices. The design ar ...

    SBIRPhase I2010Missile Defense Agency Department of Defense
  4. Type II SLS for 2-Color FPA for Interceptor Seekers

    Amount: $100,000.00

    This Phase I SBIR effort will develop robust and high performance infrared detector technology based on two-color Type II strained-layer superlattices (SLS). The design architectures and process tech ...

    SBIRPhase I2010Missile Defense Agency Department of Defense
  5. Epi Ready InSb Substrate for HgCdTe Infrared Detectors by MBE

    Amount: $70,000.00

    This Phase I SBIR effort will evaluate the preparation of epi-ready 211B InSb substrate to be used as starting substrate for the growth of high quality HgCdTe epi materials. The InSb substrate will be ...

    SBIRPhase I2010Army Department of Defense
  6. Dual Band MWIR/LWIR SLS FPA

    Amount: $80,000.00

    This Phase I SBIR effort will develop dual-band mid-wavelength infrared/long-wavelength infrared (MWIR/LWIR) detector technology based on dual monolithic type-II strained-layer superlattices (SLS). Th ...

    SBIRPhase I2010Navy Department of Defense
  7. Predictive Modeling/Control for Intersubband and Interband Quantum Devices Grown by MBE

    Amount: $374,950.00

    This Phase II STTR effort will demonstrate intersubband and interband quantum device modeling capability using UT-Dallas BandProf software package and optical coupling efficiency modeling using SMU op ...

    STTRPhase II2007Air Force Department of Defense
  8. Broadband LWIR C-IHET FPA for Discrimination Seekers

    Amount: $100,000.00

    This Phase I STTR proposes to develop Focal Plane Array (FPA) based on Corrugated-Infrared Hot Electron Transistor (C-IHET) technology as a passive sensor for discrimination seekers. The initial goal ...

    STTRPhase I2007Missile Defense Agency Department of Defense
  9. Predictive Modeling for Intersubband Quantum Devices Grown by MBE

    Amount: $99,924.00

    This Phase I STTR effort will demonstrate intersubband quantum device modeling capability using UT-Dallas BandProf software package and optical coupling efficiency modeling using SMU optical cavity so ...

    STTRPhase I2005Air Force Department of Defense

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