HIGH RESOLUTION SCANNING RF PROBE FOR SEMICONDUCTOR ELECTRICCONDUCTIVITY MEASUREMENTS

Award Information
Agency: National Science Foundation
Branch: N/A
Contract: N/A
Agency Tracking Number: 5233
Amount: $40,000.00
Phase: Phase I
Program: SBIR
Awards Year: 1987
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
Interscience Inc.
105 Jordan Rd, Troy, NY, 12180
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 () -
Business Contact
 James T. Woo
Title: President
Phone: () -
Research Institution
N/A
Abstract
ELECTRIC CONDUCTIVITY AND EXCESS CARRIER LIFETIME ARE TWO OFTHE MOST IMPORTANT PARAMETERS THAT DETERMINE THE PERFORMANCEOF SEMICONDUCTOR MATERIALS FOR APPLICATION AS PHOTODETECTORS. THE ABILITY TO OBTAIN NON-DESTRUCTIVE, HIGH RESOLUTION MEASUREMENTS OF THESE CHARACTERISTICS IS ONEOF THE BASIC PROBLEMS IN THE DEVELOPMENT AND FABRICATION OF SUCH MATERIALS. A TECHNIQUE TO MEASURE THE CONDUCTIVITY BASED ON SCANNING THE SAMPLES WITH A RF PROBE CAPABLE OF SPATIAL RESOLUTION OF A FEW MICRONS IS PROPOSED. BY MEASURING THE DECAY OF THE CONDUCTIVITY FOLLOWING EXCITATION BY A LIGHT PULSE, THE EXCESS CARRIER LIFETIME CAN ALSO BE DETERMINED. A PROGRAM TO DETERMINE THE LIMITINGSENSITIVITY AND RESOLUTION BY TWO VARIATIONS OF THE BASIC APPROACH IS PROPOSED FOR THE PHASE I EFFORT.

* information listed above is at the time of submission.

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