HIGH RESOLUTION SCANNING RF PROBE FOR SEMICONDUCTOR ELECTRICCONDUCTIVITY MEASUREMENTS

Award Information
Agency:
National Science Foundation
Branch
n/a
Amount:
$40,000.00
Award Year:
1987
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Agency Tracking Number:
5233
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Interscience Inc.
105 Jordan Rd, Troy, NY, 12180
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
() -
Business Contact:
James T. Woo
President
() -
Research Institution:
n/a
Abstract
ELECTRIC CONDUCTIVITY AND EXCESS CARRIER LIFETIME ARE TWO OFTHE MOST IMPORTANT PARAMETERS THAT DETERMINE THE PERFORMANCEOF SEMICONDUCTOR MATERIALS FOR APPLICATION AS PHOTODETECTORS. THE ABILITY TO OBTAIN NON-DESTRUCTIVE, HIGH RESOLUTION MEASUREMENTS OF THESE CHARACTERISTICS IS ONEOF THE BASIC PROBLEMS IN THE DEVELOPMENT AND FABRICATION OF SUCH MATERIALS. A TECHNIQUE TO MEASURE THE CONDUCTIVITY BASED ON SCANNING THE SAMPLES WITH A RF PROBE CAPABLE OF SPATIAL RESOLUTION OF A FEW MICRONS IS PROPOSED. BY MEASURING THE DECAY OF THE CONDUCTIVITY FOLLOWING EXCITATION BY A LIGHT PULSE, THE EXCESS CARRIER LIFETIME CAN ALSO BE DETERMINED. A PROGRAM TO DETERMINE THE LIMITINGSENSITIVITY AND RESOLUTION BY TWO VARIATIONS OF THE BASIC APPROACH IS PROPOSED FOR THE PHASE I EFFORT.

* information listed above is at the time of submission.

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