REGENERATIVE EPITAXIAL GROWTH OF SINGLE CRYSTAL DIAMOND FILMS

Award Information
Agency:
National Science Foundation
Branch
n/a
Amount:
$49,813.00
Award Year:
1992
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
17340
Agency Tracking Number:
17340
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
105 Jordan Road, Troy, NY, 12180
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Dr. James T. Woo
(518) 283-7500
Business Contact:
() -
Research Institute:
n/a
Abstract
THE SYNTHESIS OF DIAMOND AT LOW PRESSURE BY PLASMA ASSISTED VAPOR DEPOSITION PROCESS HAS OPENED UP THE PROSPECT FOR THE REALIZATION OF DIAMOND BASED ELECTRONIC DEVICES WITH SUPERIOR PERFORMANCE AND HIGH TEMPERATURE AND RADIATION TOLERANCE CAPABILITIES. SUCH APPLICATIONS REQUIRE THE DIAMOND FILM TO BE IN SINGLE CRYSTAL FORM. THE REALIZATION OF EPITAXIAL GROWN SINGLE CRYSTAL DIAMONDS IN ANY SIGNIFICANT SIZES, HOWEVER, REMAINS AS AN ILLUSIVE GOAL MAINLY DUE TO PRESENT LACK OF UNDERSTANDING AND ABILITY TO CONTROL THE NUCLEATION PROCESS. AN ALTERNATE STRATEGY FOR THE LOW PRESSURE EPITAXIAL GROWTH OF SINGLE CRYSTAL DIAMOND FILMS IS PROPOSED. THE STRATEGY IS BASED ON TECHNIQUES THATHAVE BEEN DEMONSTRATED IN OTHER CONTEXTS. THE PHASE I EFFORT IS TO DETERMINE IF THESE TECHNIQUES CAN BE COMBINED SEQUENTIALLY AND REMAIN EFFECTIVE, LEADING TO THE REALIZATION OF AN EFFECTIVE TECHNIQUE FOR THE PREPARATION OFSINGLE CRYSTAL DIAMOND FILMS.

* information listed above is at the time of submission.

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