Pseudo-homoepitaxial Growth Of Single Cell Diamond Films

Award Information
Agency:
Department of Defense
Branch:
Missile Defense Agency
Amount:
$58,963.00
Award Year:
1993
Program:
SBIR
Phase:
Phase I
Contract:
N/A
Agency Tracking Number:
19665
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Interscience, Inc.
105 Jordan Road, Troy, NY, 12180
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
N/A
Principal Investigator
 James Woo, Phd
 (518) 283-7500
Business Contact
Phone: () -
Research Institution
N/A
Abstract
HETEROEPITAXY OF SINGLE CRYSTAL DIAMOND FILMS AT LOW PRESSURE BY ENERGY ASSISTED CHEMICAL VAPOR DEPOSITION FOR ELECTRONIC DEVICE APPLICATIONS IS A GOAL THAT REMAINS UNREALIZED AFTER MORE THAN A DECADE OF EFFORTS WORLD WIDE. A FUNDAMENTAL PROBLEM IS THE LACK OF CONTROL ON NUCLEATION IN THE HETEROEPITAXY PROCESS. RECENTLY, OUR ORGANIZATION HAS SUCCESSFULLY DEMONSTRATED FOR THE PREPARATION OF SINGLE CRYSTAL DIAMOND SUBSTRATES BY A REGENERATIVE EPITAXIAL GROWTH (REG) PROCESS. THE EXPLORATION OF AN ALTERNATIVE TECHNIQUE, THE PSEUDO-HOMOEPITAXY GROWTH (PHG) PROCESS. THAT MAY BE SIMPLER TO IMPLEMENT IS PROPOSED. THE PHASE I OBJECTIVE IS TO EXPERIMENTALLY EVALUATE THE FEASIBILITY OF THE CRITICAL STEPS IN THE PROCESS. SUCCESSFUL OUTCOME WILL LEAD TO AVAILABILITY OF DIAMOND SUBSTRATES FOR THE DEVELOPMENT OF DIAMOND BASED ELECTRONICS.

* information listed above is at the time of submission.

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