Pseudo-homoepitaxial Growth Of Single Cell Diamond Films

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 19665
Amount: $58,963.00
Phase: Phase I
Program: SBIR
Awards Year: 1993
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
Interscience, Inc.
105 Jordan Road, Troy, NY, 12180
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 James Woo, Phd
 (518) 283-7500
Business Contact
Phone: () -
Research Institution
N/A
Abstract
HETEROEPITAXY OF SINGLE CRYSTAL DIAMOND FILMS AT LOW PRESSURE BY ENERGY ASSISTED CHEMICAL VAPOR DEPOSITION FOR ELECTRONIC DEVICE APPLICATIONS IS A GOAL THAT REMAINS UNREALIZED AFTER MORE THAN A DECADE OF EFFORTS WORLD WIDE. A FUNDAMENTAL PROBLEM IS THE LACK OF CONTROL ON NUCLEATION IN THE HETEROEPITAXY PROCESS. RECENTLY, OUR ORGANIZATION HAS SUCCESSFULLY DEMONSTRATED FOR THE PREPARATION OF SINGLE CRYSTAL DIAMOND SUBSTRATES BY A REGENERATIVE EPITAXIAL GROWTH (REG) PROCESS. THE EXPLORATION OF AN ALTERNATIVE TECHNIQUE, THE PSEUDO-HOMOEPITAXY GROWTH (PHG) PROCESS. THAT MAY BE SIMPLER TO IMPLEMENT IS PROPOSED. THE PHASE I OBJECTIVE IS TO EXPERIMENTALLY EVALUATE THE FEASIBILITY OF THE CRITICAL STEPS IN THE PROCESS. SUCCESSFUL OUTCOME WILL LEAD TO AVAILABILITY OF DIAMOND SUBSTRATES FOR THE DEVELOPMENT OF DIAMOND BASED ELECTRONICS.

* information listed above is at the time of submission.

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