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IONWERKS INC
UEI: XFHSJJLN7ZQ7
# of Employees: 4
HUBZone Owned: No
Socially and Economically Disadvantaged: No
Woman Owned: No
Award Charts
Award Listing
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MBE Thin Film Formation Using Nitrogen Source
Amount: $59,953.00A novel nitrogen beam source will provide 5 eV atomic and molecular nitrogen to a 0.5 cm diameter circle with a flux of 10(21)/cm(2)/sec. Larger areas can be irradiated with a lower flux (eg. 10(18)/c ...
SBIRPhase I1995Department of Defense Missile Defense Agency -
Cryo-Radical Chemistry and Cluster Beam Deposition
Amount: $59,546.00A unique approach to formation of nitride materials using matrix isolation methods will be attempted. Large quantities of reactants can be prepared and forced to react under much more controlled condi ...
SBIRPhase I1995Department of Defense Missile Defense Agency -
LARGE AREA NON-CONTAMINATING HIGH FLUX ATOMIC HYDROGEN SOURCE
Amount: $59,558.00A new approach to generating atomic hydrogen (and possibly N and O) will give atomic fluxes of 10(-19) atoms/cm(-2) over a three inch wafer positioned three inches in front of the source. Scalt up to ...
SBIRPhase I1994Department of Defense Missile Defense Agency -
GROWTH OF LATTICE MATCHED GAN/INGAN/ZNO IN A MBE/CBE CHAMBER OPTIMIZED FOR HIGH TEMPERATURE WIDE BANDGAP NITRIDE GROWTH
Amount: $60,000.00Ionwerks has begun an internally funded project to design and manufacture an MBE growth chamber specifically designed and optimized for wide bandgap nitrides (compatible with Si/Ge growth also). This ...
SBIRPhase I1994Department of Defense Missile Defense Agency -
ATOMIC LAYER EPITAXY DEPOSITION OF N AND P DOPED CUBIC BORON NITRIDE THIN FILMS FOR HIGH TEMPERATURE SEMICONDUCTING DEVICES
Amount: $65,000.00UNDERSTANDING THE BEHAVIOR ON N- AND P-TYPE DOPED CUBIC BORON NITRIDE (CBN) THIN FILMS IS IMPORTANT TO THE ABILITY TO MAKE ELECTRONIC DEVICES TO TAKE ADVANTAGE OF THE THERMAL AS WELL AS ELECTRONIC PRO ...
SBIRPhase I1994National Science Foundation -
TECHNIQUE FOR IN-SITU QUANTITATION OF DOPANTS AND MAJOR ELEMENT DURING EPILAYER GROWTH AND PROCESSING
Amount: $499,094.00A TECHNIQUE WILL BE DEMONSTRATED WHICH CAN PROVIDE ACCURATE AND QUANTIA TECHNIQUE WILL BE DEMONSTRATED WHICH CAN PROVIDE ACCURATE AND QUANTITATIVE ELEMENTAL ANALYSIS IN REAL TIME DURING EPILAYER GROWT ...
SBIRPhase II1993Department of Defense Army -
Monitoring Epitaxial Layer Growth
Amount: $200,000.00When making a structure like AlGaAs or SiGe by heteroexpitaxial growth techniques, it would be nice to know when one atomic layer is completed so that the next can be started. The quality of the devic ...
SBIRPhase II1993Department of Defense Missile Defense Agency -
IN SITU SURFACE ELEMENTAL ANALYSIS/PROCESS CONTROL AT MILLITORR PRESSURE DURING SUPERCONDUCTOR FILM DEPOSITION
Amount: $50,000.00THE HIGH PRESSURE LIMITS OF A NEW PROPRIETARY TECHNIQUE FOR SURFACE ELEMENTAL AND ISOTOPIC ANALYSIS ARE BEING EXPLORED. THE TECHNIQUE SHOULD BE USEFUL IN THE MILLITORR PRESSURE REGIME, THUS ALLOWING M ...
SBIRPhase I1992Department of Energy -
Monitoring Epitaxial Layer Growth
Amount: $49,283.00N/A
SBIRPhase I1992Department of Defense Missile Defense Agency -
MASS SPECTROSCOPY OF RECOILED IONS (MSRI FOR U-PB GEOCHRONOLOGY
Amount: $50,000.00A NEW TECHNIQUE IS BEING DEVELOPED FOR MINORITY ISOTOPE AND TRACE ELEMENT ANALYSIS ON SOLID SURFACES. THE APPARATUS IS SIMPLE, RELIABLE, AND RELATIVELY INEXPENSIVE. DIRECT RECOILING OF SURFACE ATOMS R ...
SBIRPhase I1991National Science Foundation
