IMPURITY CONCENTRATIONS ON GAAS(100)

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: N/A
Agency Tracking Number: 4034
Amount: $50,000.00
Phase: Phase I
Program: SBIR
Awards Year: 1986
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
Ionwerks
2215 Addison, Houston, TX, 77030
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 J ALBERT SCHULTZ
 (713) 667-1691
Business Contact
Phone: () -
Research Institution
N/A
Abstract
DETERMINATION OF THE SURFACE STOICHIOMETRY OF SEMICONDUCTOR SURFACES DURING PROCESSING BY MBE OR CVD IS DESIREABLE. DIRECT RECOIL SPECTROSCOPY (DRS) MAY OVERCOME THE LIMITATIONS INHERENT IN CONVENTIONAL SURFACE ANALYSIS SO THAT ANALYSIS OF GAAS SURFACES SIMULTANEOUSLY FOR H, C, O, N, AL, SI, FE, ZN, GA, AND AS WILL BE POSSIBLE ON SUBSECOND TIME SCALES AT MODERATE PRESSURE (10(-2) TORR). AZIMUTHAL SCANS OF THE SINGLE CRYSTAL SUBSTRATE COUPLED WITH BLOCKING AND SHADOWING ANALYSIS WILL PROVIDE DOPANT AND IMPURITY SURFACE POSITION. DRS WILL BE USED AS A REAL TIME MONITOR OF AL DEPOSITION ON GAAS.

* information listed above is at the time of submission.

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