LARGE AREA NON-CONTAMINATING HIGH FLUX ATOMIC HYDROGEN SOURCE
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2472 Bolsover, Suite 255, Houston, TX, 77005
J. Albert Schultz
AbstractA new approach to generating atomic hydrogen (and possibly N and O) will give atomic fluxes of 10(-19) atoms/cm(-2) over a three inch wafer positioned three inches in front of the source. Scalt up to larger areas may be possible in phase II. We will examine the use of this source as an alternative to hot filament assisted generation of atomic H for diamond thin film growth. Use of the source for MBE epitaxy especially in Si/Ge systems may be possible particularly if metallic contamination of the film by the source is successfully minimized.
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