GROWTH OF LATTICE MATCHED GAN/INGAN/ZNO IN A MBE/CBE CHAMBER OPTIMIZED FOR HIGH TEMPERATURE WIDE BANDGAP NITRIDE GROWTH

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$60,000.00
Award Year:
1994
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
25601
Agency Tracking Number:
25601
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Ionwerks (Currently IONWERKS, INC.)
2472 Bolsover, Suite 255, Houston, TX, 77005
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
J. Albert Schultz
(713) 522-9880
Business Contact:
() -
Research Institution:
n/a
Abstract
Ionwerks has begun an internally funded project to design and manufacture an MBE growth chamber specifically designed and optimized for wide bandgap nitrides (compatible with Si/Ge growth also). This chamber will include two proprietary growth techniques which we have found to be crucial for formation of cBN thin films. Design and construction of this chamber is underway. We will use this equipment to grow lattice matched InGaN/ZnO having a bandgap of around 3.1 eV.

* information listed above is at the time of submission.

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