GROWTH OF LATTICE MATCHED GAN/INGAN/ZNO IN A MBE/CBE CHAMBER OPTIMIZED FOR HIGH TEMPERATURE WIDE BANDGAP NITRIDE GROWTH
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2472 Bolsover, Suite 255, Houston, TX, 77005
J. Albert Schultz
AbstractIonwerks has begun an internally funded project to design and manufacture an MBE growth chamber specifically designed and optimized for wide bandgap nitrides (compatible with Si/Ge growth also). This chamber will include two proprietary growth techniques which we have found to be crucial for formation of cBN thin films. Design and construction of this chamber is underway. We will use this equipment to grow lattice matched InGaN/ZnO having a bandgap of around 3.1 eV.
* information listed above is at the time of submission.