GROWTH OF LATTICE MATCHED GAN/INGAN/ZNO IN A MBE/CBE CHAMBER OPTIMIZED FOR HIGH TEMPERATURE WIDE BANDGAP NITRIDE GROWTH
Department of Defense
Missile Defense Agency
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Small Business Information
2472 Bolsover, Suite 255, Houston, TX, 77005
Socially and Economically Disadvantaged:
J. Albert Schultz
AbstractIonwerks has begun an internally funded project to design and manufacture an MBE growth chamber specifically designed and optimized for wide bandgap nitrides (compatible with Si/Ge growth also). This chamber will include two proprietary growth techniques which we have found to be crucial for formation of cBN thin films. Design and construction of this chamber is underway. We will use this equipment to grow lattice matched InGaN/ZnO having a bandgap of around 3.1 eV.
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