MBE Thin Film Formation Using Nitrogen Source

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 28346
Amount: $59,953.00
Phase: Phase I
Program: SBIR
Awards Year: 1995
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
Ionwerks
2472 Bolsover, Suite 255, Houston, TX, 77005
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 J. Albert Schultz
 (713) 522-9880
Business Contact
Phone: () -
Research Institution
N/A
Abstract
A novel nitrogen beam source will provide 5 eV atomic and molecular nitrogen to a 0.5 cm diameter circle with a flux of 10(21)/cm(2)/sec. Larger areas can be irradiated with a lower flux (eg. 10(18)/cm(2)/sec over a 2" diameter wafer). The technique will put minimal gas load into the chamber so it will be compatible with ion pumped MBE systems. The source will be used in an attempt to synthesize crystalline cBN and InGaN thin films. Nitrides in thin film form are potentially commercializable. The sale of the atom source as an add-on to thin film deposition systems is directly commercializable even after Phase I. The source may be particularly appropriate for wide bandgap nitride synthesis.

* information listed above is at the time of submission.

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