ATOMIC LAYER EPITAXY DEPOSITION OF N AND P DOPED CUBIC BORON NITRIDE THIN FILMS FOR HIGH TEMPERATURE SEMICONDUCTING DEVICES

Award Information
Agency:
National Science Foundation
Branch
n/a
Amount:
$65,000.00
Award Year:
1994
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Agency Tracking Number:
27474
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Ionwerks
2472 Bolsover Ste 255, Houston, TX, 77005
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Kelley L Waters
(713) 522-9880
Business Contact:
() -
Research Institution:
n/a
Abstract
UNDERSTANDING THE BEHAVIOR ON N- AND P-TYPE DOPED CUBIC BORON NITRIDE (CBN) THIN FILMS IS IMPORTANT TO THE ABILITY TO MAKE ELECTRONIC DEVICES TO TAKE ADVANTAGE OF THE THERMAL AS WELL AS ELECTRONIC PROPERTIES OF CBN. N- AND P-TYPE DOPED CBN ARE BEING GROWN USING ATOMIC LAYER EPITAXY (ALE) IN A MOLECULAR BEAM EPITAXY (MBE) VACUUM CHAMBER. PREVIOUSLY RESEARCHERS HAVE BEEN ABLE TO ACHIEVE BN FILMS WHICH ARE HIGHLY CUBIC IN NATURE THROUGH THE USE OF AN ATOMIC NITROGEN SOURCE AND AN ELECTRON BEAM EVAPORATOR FOR THE BORON. A DOPANT STUDY USING MASS SPECTROSCOPY OF RECOILED IONS (MSRI) TECHNIQUE AND SECONDARY ION MASS SPECTROSCOPY (SIMS) IS BEING PERFORMED TO UNDERSTAND THE VARIOUS LEVELS OF DOPING ON THE DOPED CBN SAMPLES GROWN. THE VARIOUS CONCENTRATION LEVELS OF THE CORRESPONDING-DOPANTS (BE AND MG FOR P-TYPE; SI AND S FOR N-TYPE) ARE BEING ANALYZED SO THAT THERE IS A SUFFICIENT LEVEL TO OBTAIN A P-N JUNCTION.

* information listed above is at the time of submission.

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