Novel Pulsed Nitrogen Source Diagnostic for GaN Thin Film Stoichiometry Control
Department of Defense
Agency Tracking Number:
Solicitation Topic Code:
Small Business Information
2472 Bolsover, Suite 255, Houston, TX, 77005
Socially and Economically Disadvantaged:
J. Albert Schultz
AbstractGood insitu tools exist for measuring temperatures and thickness during epitaxial thin film growth. In contrast, almost no technique gives information on surface elemental composition in real time. We propose an extremely simple experiment which can be performed with an ion source little more complex that a noble ion sputter gun. This technique can very accurately measure surface coverages of light elements on heavy or heavy elements on light using low energy beam doses of less than 0.1 nA/cm2. Thus layer composition control during the growth of nitride thin films such as GaN and InN will be aided.
* information listed above is at the time of submission.