Novel Pulsed Nitrogen Source Diagnostic for GaN Thin Film Stoichiometry Control

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$732,936.00
Award Year:
1997
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Award Id:
32300
Agency Tracking Number:
32300
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
2472 Bolsover, Suite 255, Houston, TX, 77005
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
J. Albert Schultz
(713) 522-9880
Business Contact:
() -
Research Institute:
n/a
Abstract
Good insitu tools exist for measuring temperatures and thickness during epitaxial thin film growth. In contrast, almost no technique gives information on surface elemental composition in real time. We propose an extremely simple experiment which can be performed with an ion source little more complex that a noble ion sputter gun. This technique can very accurately measure surface coverages of light elements on heavy or heavy elements on light using low energy beam doses of less than 0.1 nA/cm2. Thus layer composition control during the growth of nitride thin films such as GaN and InN will be aided.

* information listed above is at the time of submission.

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