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Novel Pulsed Nitrogen Source Diagnostic for GaN Thin Film Stoichiometry Control

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: N/A
Agency Tracking Number: 32300
Amount: $732,936.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Solicitation Year: N/A
Award Year: 1997
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
2472 Bolsover, Suite 255
Houston, TX 77005
United States
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 J. Albert Schultz
 (713) 522-9880
Business Contact
Phone: () -
Research Institution

Good insitu tools exist for measuring temperatures and thickness during epitaxial thin film growth. In contrast, almost no technique gives information on surface elemental composition in real time. We propose an extremely simple experiment which can be performed with an ion source little more complex that a noble ion sputter gun. This technique can very accurately measure surface coverages of light elements on heavy or heavy elements on light using low energy beam doses of less than 0.1 nA/cm2. Thus layer composition control during the growth of nitride thin films such as GaN and InN will be aided.

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