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Silicon-Based Infrared Imaging Sensor

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: W31P4Q-07-C-0068
Agency Tracking Number: 06SB2-0308
Amount: $98,960.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: SB062-015
Solicitation Number: 2006.2
Timeline
Solicitation Year: 2006
Award Year: 2006
Award Start Date (Proposal Award Date): 2006-12-06
Award End Date (Contract End Date): 2007-08-06
Small Business Information
5032 Forbes Avenue
Pittsburgh, PA 15289
United States
DUNS: 362810496
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: Yes
Principal Investigator
 Suresh Santhanam
 Second Engineer
 (412) 268-2026
 irimsens@gmail.com
Business Contact
 Elias Towe
Title: First Engineer
Phone: (412) 268-2454
Email: irimsens@gmail.com
Research Institution
N/A
Abstract

A Phase I effort to investigate the use of poly-crystalline Ge-on-Si and strained SiGe alloy grown on silicon for near-infrared photodetectors is proposed. These devices are expected to cover the spectral band that stretches from a wavelength of 0.8 to 1.6 microns. If reasonable performance devices can be fabricated, this will potentially pave the way for the integration of signal processing electronics with the detectors using standard CMOS process technology. The culmination of the effort (in Phase II) would then be the demonstration of near-infrared focal-plane imaging and sensing arrays. These low-cost arrays could potentially be used in certain applications in lieu of systems made from exotic compound semiconductor materials such as HgCdTe, InSb, or InGaAs. Specifically, in applications where short-distance sensing or imaging is important. The proposed work will investigate heterojunction diodes fabricated from poly-Ge grown (by thermal evaporation) on Si as well as strained heterojunction single-crystalline SiGe diodes grown on Si obtained from commercially available sources. Basic device characteristics, including (i) photocurrent, (ii) dark current, (iii) noise current, (iv) conversion efficiency, and (v) detectivity will be studied. A correlation of these characteristics with theoretical models will be conducted to aid in the optimization of the device structures.

* Information listed above is at the time of submission. *

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