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Silicon-Based Infrared Imaging Sensor

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: W31P4Q-08-C-0196
Agency Tracking Number: 06SB2-0308
Amount: $739,855.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: SB062-015
Solicitation Number: 2006.2
Solicitation Year: 2006
Award Year: 2008
Award Start Date (Proposal Award Date): 2008-05-09
Award End Date (Contract End Date): 2010-08-12
Small Business Information
5032 Forbes Avenue SMC 1290
Pittsburgh, PA 15289
United States
DUNS: 362810496
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: Yes
Principal Investigator
 Suresh Santhanam
 Vice President
 (412) 268-2026
Business Contact
 Elias Towe
Title: President
Phone: (412) 268-8091
Research Institution

Development of new short-wave infrared imaging sensors with signal processing electronics on the same substrate is critical for a number of military and commercial applications. The objective of this research is to develop a new generation of Ge-on-Si p-n heterojunction photodiodes that will culminate in a demonstration of a 64 x 64-pixel infrared imaging array. These photodiodes, whose feasibility was demonstrated in Phase I, offer the potential for the fabrication of imaging arrays with signal processing electronics co-located on the same silicon substrate. Phase II will pursue advanced development of the Ge-Si heterojunction photodiodes in order to reduce the leakage dark currents and increase the photogenerated current per unit of incident infrared power. The major milestone of the proposed work will be the demonstration of an imaging array (64 x 64), initially with hybridized read-out electronics. The initial design process of on-chip read-out electronics will also begin during Phase II.

* Information listed above is at the time of submission. *

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