Planar, High Frequency, Power Conversion Device Technology

Award Information
Agency:
Department of Defense
Amount:
$1,496,500.00
Program:
STTR
Contract:
N00014-10-C-0439
Solitcitation Year:
2009
Solicitation Number:
2009.A
Branch:
Navy
Award Year:
2010
Phase:
Phase II
Agency Tracking Number:
N09A-023-0329
Solicitation Topic Code:
N09-T023
Small Business Information
Transphorm
115 Castilian Drive, Goleta, CA, -
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
796991425
Principal Investigator
 Robert Coffie
 Director, Device Engineer
 (805) 456-1305
 rcoffie@transphormusa.com
Business Contact
 Primit Parikh
Title: Chief Operating Officer
Phone: (805) 456-1307
Email: pparikh@transphormusa.com
Research Institution
 UC Santa Barbara
 Steven Denbaars
 SSLEC
Engineering 3 Building
Goleta, CA, 93106-
 (805) 893-8511
 Nonprofit college or university
Abstract
Transphorm proposes to demonstrate a normally off fast high voltage Gallium Nitride power switch solution. The switch would block to 1200V, have a threshold voltage greater than 5 V, and the phase 2 switch will target an on resistance less than 15 ohm-mm and current more than 1 Amp. To accomplish these targets, Transphorm will combine the design requirements of realizing a high (and positive) threshold voltage while maintaining a low total on resistance while maintain a low switching resistance. The device will target low dc to rf dispersion or achieve a dynamic on resistance which is within 2x of the static performance. The switch would ultimately be capable of switching at high frequencies (1 MHz or higher) with efficiency in excess of 97%.

* information listed above is at the time of submission.

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