Next Generation IR Focal Plane Array Using High Speed Tunneling Diodes (SubTopic 003E)

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$69,680.00
Award Year:
2002
Program:
SBIR
Phase:
Phase I
Contract:
DASG60-02-P-0218
Award Id:
58758
Agency Tracking Number:
02-0397
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
8130 Shaffer Pkwy, Littleton, CO, 80127
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
040245305
Principal Investigator:
BruceLanning
Nanotechnology Group Mana
(303) 285-5131
blanning@itnes.com
Business Contact:
RickHalbach
Vice Pres Business Devel
(303) 285-1739
rhalbach@itnes.com
Research Institute:
n/a
Abstract
"ITN Energy Systems, Inc. believes that significant improvements in IR sensor performance could be achieved by replacing state-of-the-art detector technologies, such as bolometers and photodiodes, with ITN's proposed direct conversion device (DCD). Anadvanced planar metal-insulator-metal (MIM) tunneling diode is the cornerstone of ITN's DCD, which employs an antenna aperture to efficiently couple to free space electromagnetic (EM) radiation and the MIM diode to rectify the resultant AC field. ITN's DCDwill serve as the detector in a focal plane array that, when combined with existing signal processing and readout technologies, will enable imaging applications from standard scene definition to hyperspectral imaging with a single sensor technology.Compared to state-of-the-art detectors, ITN's DCD offers IR Imaging with 1) Greater bandwidth: A single device for short wave IR to long wave IR (and even longer wavelengths), 2) Hyperspectral imaging: Signature identification and target trackingheterodyne detection-spectroscopic scanning of key IR bands, 3) Increased sensitivity: Detection of weak, clandestine signals, and 4) Reduced Cost: Fabrication technology compatible with large area silicon processing. With ITN's proposed processingapproach to formation of a stable and reproducible MIM tunneling barrier, monolithically integrated DCD's can be produced with the proposed properties herein. Due to the inherent scalability of ITN's antenna

* information listed above is at the time of submission.

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