Semiconductor Microbolometer Room Temperature Infrared Detectors

Award Information
Agency: Department of Defense
Branch: Army
Contract: DAAB07-03-C-P001
Agency Tracking Number: A012-1702
Amount: $729,845.00
Phase: Phase II
Program: SBIR
Awards Year: 2003
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
ITN ENERGY SYSTEMS, INC.
8130 Shaffer Pkwy, Littleton, CO, 80127
DUNS: 040245305
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Russell Hollingsworth
 Senior Scientist
 (303) 285-5154
 rhollingsworth@itnes.com
Business Contact
 Rick Halbach
Title: VP Business Development
Phone: (303) 285-1739
Email: rhalbach@itnes.com
Research Institution
N/A
Abstract
ITN Energy Systems, Inc. proposes the development of microbolometer room temperature infrared detectors using plasma enhanced chemical vapor deposition (PECVD) growth of silicon germanium alloys. This Phase II contract will see the demonstration of PECVDdeposited semiconductors with improved properties for microbolometer applications, especially reduced 1/f noise. ITN will team with a microbolometer manufacturer for the fabrication of microbolometer arrays directly on CMOS read out integrated circuits,thereby providing a solid demonstration of the improved properties. The major goal of the proposed work is the development of room temperature detector arrays for the 8-12 micron wavelength band. Fully packaged and tested focal plane arrays will bedelivered to the Army at the end of this contract.Affordable room temperature infrared detector arrays will have wide applicability in military night vision systems, as well as enabling wide spread civilian applications such as automotive night drivingaids, security monitoring, and fire fighting.

* information listed above is at the time of submission.

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