Defect Passivation for Production-Quality and High-Bandgap CIGS and CIAS Solar Cells

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA9453-04-M-0106
Agency Tracking Number: F041-025-1752
Amount: $99,993.00
Phase: Phase I
Program: SBIR
Awards Year: 2004
Solicitation Year: 2004
Solicitation Topic Code: AF04-025
Solicitation Number: 2004.1
Small Business Information
ITN ENERGY SYSTEMS, INC.
8130 Shaffer Pkwy, Littleton, CO, 80127
DUNS: 040245305
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Garth Jensen
 Senior Scientist
 (303) 285-5198
 gjensen@itnes.com
Business Contact
 Lee Petersen
Title: Director, Business Development
Phone: (303) 285-1824
Email: lpetersen@itnes.com
Research Institution
N/A
Abstract
A major factor that detracts from the many advantages offered by thin-film flexible CIGS PV for non-terrestrial applications is that it currently provides substantially lower solar conversion efficiencies than crystalline PV technology. While CIGS device efficiencies exceeding 19% have been produced in the laboratory, efficiencies of devices produced in large-scale production have been substantially lower. Recent work has identified the presence of electronic atomic-level defects in the CIGS material as a primary factor responsible for the gap between laboratory and production efficiencies. Also, the drop-off in efficiencies with increasing bandgap has been attributed to a higher density of defects serving as recombination centers or a higher sensitivity to such defects. Such defects must be eliminated or passivated to achieve the potential of CIGS technology. While all manufactures of CIGS have put considerable effort into minimizing formation of defects through optimizing process parameters, another approach to controlling defects is to "passivate" them by adding constituents that eliminate their electronic activity or alter it in a way that reduces the detrimental effect. ITN Energy Systems, Inc. proposes to conduct a thorough study of defects and potential defect passivation methods in production-quality CIGS and high-bandgap CIGS and CIAS (copper-indium-aluminum-diselenide).

* information listed above is at the time of submission.

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