NANOMETER ETCHING OF GALLIUM ARSENIDE WITH THE SCANNING TUNNELING MICROSCOPE

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$49,968.00
Award Year:
1988
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
8756
Agency Tracking Number:
8756
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
2854 S Haven Dr, Annapolis, MD, 21401
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
LARRY D MCCORMICK
(301) 266-8934
Business Contact:
() -
Research Institution:
n/a
Abstract
SCANNING TUNNELING MICROSCOPY (STM) HAS BEEN DEMONSTRATED TO BE VALUABLE IN THE STUDY OF SURFACES. THE RESULTS OF THESE SURFACE STUDIES INDICATE THAT STM CAN ALSO BE USEFUL FOR SURFACE MODIFICATION ON THE NANOMETER SCALE. HOWEVER, BEFORE THIS POTENTIAL CAN BE FULFILLED, IT MUST BE DEMONSTRATED THAT THE STM CAN BE USED REPRODUCIBLY FOR SOLUTION ETCHING. THE GOAL OF THIS RESEARCH IS TO DEMONSTRATE THAT THE STM HAS THE CAPABILITY OF ETCHING GAAS AT THE SUBMICROMETER LEVEL.

* information listed above is at the time of submission.

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