J. A. Woollam Co., Inc.

Basic Information

645 M Street, Suite 102
Lincoln, NE, 68508

Company Profile

n/a

Additional Details

Field Value
DUNS: 175330976
Hubzone Owned: N
Socially and Economically Disadvantaged: N
Woman Owned: N
Number of Employees: 42


  1. Terahertz Ellipsometry for Reflection-Mode Material Characterization

    Amount: $749,183.00

    As technologies utilizing THz radiation (light) develop, the optical properties for many materials need to be determined accurately as a function of frequency in a variety of applications including: T ...

    STTR Phase II 2009 Army Department of Defense
  2. Terahertz Ellipsometry for Reflection-Mode Material Characterization

    Amount: $99,993.00

    As technologies utilizing THz radiation (light) are developed, the optical properties for many materials need to be determined accurately as a function of frequency. In a security screening system, m ...

    STTR Phase I 2008 Army Department of Defense
  3. N/A

    Amount: $400,000.00

    N/A

    SBIR Phase II 1999 National Science Foundation
  4. Spacecraft Thermal Control Management Using Electrochromics

    Amount: $390,000.00

    Thermal control of a space satellite in orbit is usually accomplished by balancing the energy emitted by the satellite as infrared radiation against the energy dissipated by internal electrical (and o ...

    SBIR Phase II 1998 Missile Defense Agency Department of Defense
  5. SBIR Phase I: Infrared Spectroscopic Ellipsometry

    Amount: $99,999.00

    N/A

    SBIR Phase I 1998 National Science Foundation
  6. Spacecraft Thermal Control Management Using Electrochromics

    Amount: $60,000.00

    Thermal control of a space satellite in orbit is usually accomplished by balancing the energy emitted by the satellite as infrared radiation against the energy dissipated by internal electrical (and o ...

    SBIR Phase I 1997 Missile Defense Agency Department of Defense
  7. ELECTRON CYCLOTRON RESONANCE (ECR) SEMICONDUCTOR ETCHING PROCESS CONTROL BY ELLIPSOMETRY

    Amount: $341,980.00

    THE NEED FOR SMALLER SEMICONDUCTOR DEVICE STRUCTURES FOR USE IN VERY HIGH SPEED MICROELECTRONICS REQUIRES A NEW GENERATION OF PLASMA ETCHING TECHNOLOGY. ECR PROMISES TO PROVIDE FEATURES AS SMALL AS 0. ...

    SBIR Phase II 1993 Army Department of Defense
  8. REAL TIME MONITOR AND CONTROL OF MBE GROWTH OF HGCDTE BY SPECTROSCOPIC ELLIOPSOMETRY

    Amount: $489,495.00

    II-VI SEMICONDUCTORS, ESPECIALLY HGCDTE, ARE USED EXTENSIVELY IN INFRARED IMAGING AND NIGHT VISION ELECTRONICS. THESE SEMICONDUCTORS HAVE SOFT SURFACES; GROWTH OF DEVICE QUALITY MATERIAL IS DIFFICULT; ...

    SBIR Phase II 1993 Army Department of Defense
  9. REAL TIME SPACE MATERIALS DEGRADATION MONITOR USING ELLISPSOMETER

    Amount: $474,199.00

    N/A

    SBIR Phase II 1993 National Aeronautics and Space Administration
  10. Electrically Conductive, Atomic Oxygen Protective Coatings for Space Power Systems

    Amount: $50,000.00

    N/A

    SBIR Phase I 1993 National Aeronautics and Space Administration

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