Array Processing Techniques for III-V Material, Strained Layer Superlattice, Mid and Long Wavelength, High Sensitivity Infrared (IR) Sensors

Award Information
Agency: Department of Defense
Branch: Army
Contract: W15P7T-10-C-S605
Agency Tracking Number: A092-080-1537
Amount: $69,833.00
Phase: Phase I
Program: SBIR
Awards Year: 2010
Solicitation Year: 2009
Solicitation Topic Code: A09-080
Solicitation Number: 2009.2
Small Business Information
ASL Analytical
2500 Crosspark Road, Coralville, IA, 52241
DUNS: 621549414
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Ed Koerperick
 Research Scientist
 (319) 665-2214
Business Contact
 Mark Arnold
Title: Vice President
Phone: (319) 335-1368
Research Institution
This proposal describes an approach to realize InAs/GaSb type II superlattice focal plane arrays through planar processing. A problem with conventional mesa diode processing approaches is that nonradiative surface recombination at the exposed pn junction is extremely rapid, leading to surface leakage currents that limit the mesa diode performance. By eliminating etched sidewalls through planar processing, we expect edge leakage current to be greatly reduced without compromising areal leakage currents. Planar processing using sealed ampoules or a pseudo-closed box approach requires strict control of the partial pressures is required to obtain reproducible diffusion profiles and to avoid surface damage in both of these approaches. An alternative approach which we propose to follow is the open-tube diffusion from doped spin-on films, which are commercially available for a variety of dopant species, including zinc. We believe diffusion of zinc from spin on SiOx presents a simpler, more manufacturable approach to planar processing focal plane arrays than the ampoule approach or the pseudo-closed box approach.

* information listed above is at the time of submission.

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