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High-Voltage Gallium Oxide Devices for Space Power Electronics

Award Information
Agency: National Aeronautics and Space Administration
Branch: N/A
Contract: 80NSSC21C0162
Agency Tracking Number: 211965
Amount: $124,943.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: Z1
Solicitation Number: SBIR_21_P1
Solicitation Year: 2021
Award Year: 2021
Award Start Date (Proposal Award Date): 2021-05-13
Award End Date (Contract End Date): 2021-11-19
Small Business Information
6820 Moquin Dr NW
Huntsville, AL 35806-2900
United States
DUNS: 185169620
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Partha Chakraborty
 (256) 726-4800
Business Contact
 Silvia Harvey
Phone: (256) 726-4858
Research Institution

Future NASA science and exploration missions require significant performance improvements over the state-of-the-art in Power Management and Distribution (PMAD) systems. Space qualified, high voltage power electronics can lead to higher efficiency and significant SWaP-C advantage at the system architecture level and serve as an enabling technology for diverse applications.nbsp;Gallium Oxide (Ga2O3) is an ultra-wide bandgap semiconductor technology with superior electronic properties for high-voltage power applications. Ga2O3 devices offer higher temperature operation, lower on-resistance, higher breakdown voltages, and higher power conversion efficiency than Silicon power devices. However, their performance in the space environment, including high-energy radiation and wide temperature fluctuations, is largely unknown. A thorough characterization and design effort is essential for advancing this technology to meeting NASA requirements.nbsp;CFDRC, in collaboration with the University at Buffalo (UB), Vanderbilt University, and KYMA Technologies, will utilize a proven experimental and physics-based modeling approach to address this challenge. In Phase I, we will perform irradiation testing for single event effects (SEEs) of recently demonstrated 8kV beta;-Ga2O3 power MOSFETs from UB and generate measurement data for radiation tolerance. Detailed TCAD modeling of SEEs will be performed for insight into physical mechanisms behind the observed radiation response. In Phase II, we will perform additional heavy-ion and total dose testing as a function of temperature and bias. Extensive TCAD-based modeling will be performed to identify radiation and temperature dependent mechanisms, and device structure/process modifications for improved radiation tolerance will be investigated. Promising solutions will be prototyped and tested. Participation by KYMA in Phase II and beyond will ensure manufacturability of the space-qualified, beta;-Ga2O3 power MOSFET technology.

* Information listed above is at the time of submission. *

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