Kyma Technologies

Basic Information

8829 Midway West Road
Raleigh, NC, 27617-

Company Profile

n/a

Additional Details

Field Value
DUNS: 0200806
Hubzone Owned: N
Socially and Economically Disadvantaged: N
Woman Owned: N
Number of Employees: n/a


  1. Millimeter Thick, Periodically Oscillating Polarity GaN Grown via HVPE

    Amount: $517,616.00

    Gallium Nitride is a wide bandgap, highly transparent material with a second order non-linear susceptibility similar to that of LiNbO3 with high thermal conductivity. As such, it is of interest for us ...

    SBIR Phase II 2015 Department of DefenseNavyDepartment of Defense
  2. Cost Effective GaN on Diamond Template Manufacturing

    Amount: $80,000.00

    Kyma Technologies proposes an innovative approach to grow device-quality single crystal GaN on polycrystalline diamond substrates. The result is a GaN-on-diamond template that can be inserted directly ...

    SBIR Phase I 2015 Department of DefenseNavyDepartment of Defense
  3. GaN Substrate Technology

    Amount: $225,000.00

    Kyma Technologies will develop a cost-effective technique to grow high-quality gallium nitride (GaN) by developing a high growth rate process for creating crystalline GaN boules, which are used as a s ...

    SBIR Phase I 2014 ARPA-EDepartment of Energy
  4. GaN Substrate Technology

    Amount: $1,500,177.00

    Kyma Technologies will develop a cost-effective technique to grow high-quality gallium nitride (GaN) by developing a high growth rate process for creating crystalline GaN boules, which are used as a s ...

    SBIR Phase II 2014 ARPA-EDepartment of Energy
  5. GaN Substrate Technology

    Amount: $1,499,816.00

    Kyma Technologies will develop a cost-effective technique to grow high-quality gallium nitride (GaN) by developing a high growth rate process for creating crystalline GaN boules, which are used as a s ...

    SBIR Phase II 2014 ARPA-EDepartment of Energy
  6. Low Power Monolayer MoS2 Transistors for RF Applications

    Amount: $150,000.00

    Utilizing a novel solid/gas source CVD reactor designed for the growth of large area (substrates up to 4"in diameter) MoS2 single layer (SL) and multiple layer (ML) films, and leveraging already ...

    STTR Phase I 2014 ArmyDepartment of DefenseDepartment of Defense
  7. Low Cost High Reproducibility Method for GaN Seed Production

    Amount: $150,000.00

    Although several critical energy saving technologies under development today require Gallium Nitride (GaN) based semiconductor devices, a source of high quality and inexpensive GaN wafers does not yet ...

    SBIR Phase I 2013 Department of Energy
  8. FLAAT Growth Technology for Low Cost Thick High Quality GaN on Thin 8 Sapphir

    Amount: $140,183.00

    Gallium Nitrides (GaN) device market size is second only to silicon and is projected to be $50-100 billion in size as markets mature for GaN power devices, solid state lighting, and hundreds of other ...

    SBIR Phase I 2013 Department of Energy
  9. Millimeter Thick, Periodically Oscillating Polarity GaN Grown via HVPE

    Amount: $80,000.00

    Gallium Nitride (GaN) crystals have recently garnered attention as a candidate for use as a Quasi-Phase Matching (QPM) material for frequency conversion applications such as second harmonic generation ...

    SBIR Phase I 2013 Department of DefenseNavyDepartment of Defense
  10. Compact, Efficient, High Power Semiconductor Laser for Undersea Communication

    Amount: $79,995.00

    In this proposal, we build on demonstrated expertise in Bulk GaN growth (Kyma Technologies), High Indium Mole Fraction InGaN and quaternary AlInGaN growth (NCSU- Salah Bedair), device fabrication and ...

    SBIR Phase I 2012 Department of DefenseNavyDepartment of Defense

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