Kyma Technologies

Company Information

Company Name
Kyma Technologies
Address
8829 Midway West Road
Raleigh, NC, 27617-
Phone
1 919-789-8880
URL
n/a
DUNS
0200806
Number of Employees
n/a

Award Totals

PROGRAM/PHASE
AWARD AMOUNT ($)
NUMBER OF AWARDS
SBIR Phase I
$2,622,284.00
28
SBIR Phase II
$10,823,280.00
12
STTR Phase I
$719,955.00
8
STTR Phase II
$2,999,993.00
4
Chart code to be here

Award List

  1. In-Situ Monitoring during HVPE for the Producibility of Semi-Insulating GaN

    Amount: $99,969.00

    This program will utilize in-situ monitoring devices during the HVPE growth of GaN in conjunction with thermal and gas flow modeling, to establish tighter tolerances over growth variables such as subs ...

    STTR Phase I 2010 Missile Defense AgencyDepartment of Defense
  2. Electrically-Pumped III-Nitride Intersubband lasers

    Amount: $749,975.00

    Kyma Technologies, a leading supplier of low defect density GaN substrates, is teamed together with the three subcontractors at Princeton University, Lehigh University and Purdue University where some ...

    SBIR Phase II 2010 Department of Defense
  3. N/A

    Amount: $69,999.00

    N/A

    SBIR Phase I 2000 NavyDepartment of Defense
  4. N/A

    Amount: $69,567.00

    N/A

    SBIR Phase I 2000 Missile Defense AgencyDepartment of Defense
  5. N/A

    Amount: $70,000.00

    N/A

    SBIR Phase I 2000 Missile Defense AgencyDepartment of Defense
  6. Large Area Hydride Vapor Phase Epitaxy of Gallium Nitride

    Amount: $600,000.00

    High-performance GaN-based devices, such as microwave transistors, laser diodes and light emitting diodes have been demonstrated on sapphire and silicon carbide substrates, Gallium nitride substrates ...

    SBIR Phase II 2001 Missile Defense AgencyDepartment of Defense
  7. Multiple Frequency GaN FETs on Aluminum Nitride Substrates

    Amount: $100,000.00

    This program will develop high power, multiple frequency RF switches utilizing AlN substrates developed by Kyma Technologies, Inc. High-performance GaN-based devices, such as microwave transistors, ha ...

    SBIR Phase I 2001 Air ForceDepartment of Defense
  8. 4 Single Crystal Aluminum Nitride Substrates"

    Amount: $70,000.00

    Attempts to grow large area low defect density aluminum nitride substrates has had limited success. We propose the use of Kyma Technologies' novel growth process for production of 4

    SBIR Phase I 2001 Missile Defense AgencyDepartment of Defense
  9. Gallium Nitride Epitaxial Growth on Aluminum Nitride Substrates

    Amount: $70,000.00

    This program will develop a process for growth of low defect density GaN epitaxial layer on aluminum nitride substrates. Utilizing a novel high rate material transfer process, thick, low defect densi ...

    SBIR Phase I 2001 Missile Defense AgencyDepartment of Defense
  10. Gallium Nitride Wafer Preparation for Epitaxial Growth

    Amount: $70,000.00

    "Kyma Technologies has made homoepitaxial growth of GaN a reality using its 2" diameter GaN substrates. This program will develop the substrate preparation process for epitaxial growth of gallium nit ...

    SBIR Phase I 2002 Missile Defense AgencyDepartment of Defense

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