Large Area Hydride Vapor Phase Epitaxy of Gallium Nitride

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N00014-01-C-0169
Agency Tracking Number: 00-1141
Amount: $600,000.00
Phase: Phase II
Program: SBIR
Awards Year: 2001
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
8829 Midway West Road, Raleigh, NC, 27613
DUNS: 020080607
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Drew Hanser
 Director of Business Deve
 (919) 789-8889
Business Contact
 Edward Pupa
Title: President and CEO
Phone: (919) 789-8880
Research Institution
High-performance GaN-based devices, such as microwave transistors, laser diodes and light emitting diodes have been demonstrated on sapphire and silicon carbide substrates, Gallium nitride substrates are expected to further improve the performance of thesedevices due to close lattice and thermal expansion match with GaN-based device structures. The development of a low defect density GaN substrate will result in improved properties of epitaxial GaN films, and subsequently will improve the performance ofFaN-based devices. Moving to wafer size larger than 2

* Information listed above is at the time of submission. *

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