Large Area Hydride Vapor Phase Epitaxy of Gallium Nitride

Award Information
Agency:
Department of Defense
Amount:
$600,000.00
Program:
SBIR
Contract:
N00014-01-C-0169
Solitcitation Year:
N/A
Solicitation Number:
N/A
Branch:
Missile Defense Agency
Award Year:
2001
Phase:
Phase II
Agency Tracking Number:
00-1141
Solicitation Topic Code:
N/A
Small Business Information
KYMA TECHNOLOGIES, INC.
8829 Midway West Road, Raleigh, NC, 27613
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
020080607
Principal Investigator
 Drew Hanser
 Director of Business Deve
 (919) 789-8889
 hanser@kymatech.com
Business Contact
 Edward Pupa
Title: President and CEO
Phone: (919) 789-8880
Email: epupa@kymatech.com
Research Institution
N/A
Abstract
High-performance GaN-based devices, such as microwave transistors, laser diodes and light emitting diodes have been demonstrated on sapphire and silicon carbide substrates, Gallium nitride substrates are expected to further improve the performance of thesedevices due to close lattice and thermal expansion match with GaN-based device structures. The development of a low defect density GaN substrate will result in improved properties of epitaxial GaN films, and subsequently will improve the performance ofFaN-based devices. Moving to wafer size larger than 2

* information listed above is at the time of submission.

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