Large Area Hydride Vapor Phase Epitaxy of Gallium Nitride

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$600,000.00
Award Year:
2001
Program:
SBIR
Phase:
Phase II
Contract:
N00014-01-C-0169
Agency Tracking Number:
00-1141
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
KYMA TECHNOLOGIES, INC.
8829 Midway West Road, Raleigh, NC, 27613
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
020080607
Principal Investigator:
Drew Hanser
Director of Business Deve
(919) 789-8889
hanser@kymatech.com
Business Contact:
Edward Pupa
President and CEO
(919) 789-8880
epupa@kymatech.com
Research Institution:
n/a
Abstract
High-performance GaN-based devices, such as microwave transistors, laser diodes and light emitting diodes have been demonstrated on sapphire and silicon carbide substrates, Gallium nitride substrates are expected to further improve the performance of thesedevices due to close lattice and thermal expansion match with GaN-based device structures. The development of a low defect density GaN substrate will result in improved properties of epitaxial GaN films, and subsequently will improve the performance ofFaN-based devices. Moving to wafer size larger than 2

* information listed above is at the time of submission.

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