Gallium Nitride Wafer Preparation for Epitaxial Growth

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: F33615-02-M-5426
Agency Tracking Number: 02-1040
Amount: $70,000.00
Phase: Phase I
Program: SBIR
Awards Year: 2002
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
8829 Midway West Road, Raleigh, NC, 27617
DUNS: 020080607
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 N.Mark Williams
 Director of R&D
 (919) 789-8880
Business Contact
 Edward Pupa
Title: President and CEO
Phone: (919) 789-8880
Research Institution
"Kyma Technologies has made homoepitaxial growth of GaN a reality using its 2" diameter GaN substrates. This program will develop the substrate preparation process for epitaxial growth of gallium nitride films. This will include mechanical andchemical-mechanical polishing as well as wet and dry etching. The main emphasis of the phase I effort will be on GaN surface polishing and removal of the damaged layer prior to epitaxial growth. Wafer preparation is one of the most important factors ingrowth of high quality GaN epitaxial thin films. Damage induced by polishing can have severe effects on the quality of epitaxial film growth. The crystal quality of MOCVD GaN thin films will be used as the response for the preparation techniques. Thisproject will utilize parallel efforts of materials development, epi fabrication and materials characterization. The initial focus in this program will be the improvement of the GaN epitaxial growth surface. The phase II will focus on optimization of thenitride layers in order to produce high quality optoelectronic and microelectronic devices, where the greatest interest for commercial and military based applications exists. The accomplishment of low-dislocation-density GaN material will increaselifetime and brightness in optoelectronic devices. Single crystal gallium nitride will be the future building block for many commercial devices. Low defect density gallium nitride films will benefit ma

* Information listed above is at the time of submission. *

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