Gallium Nitride Wafer Preparation for Epitaxial Growth

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$70,000.00
Award Year:
2002
Program:
SBIR
Phase:
Phase I
Contract:
F33615-02-M-5426
Award Id:
59037
Agency Tracking Number:
02-1040
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
8829 Midway West Road, Raleigh, NC, 27617
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
020080607
Principal Investigator:
N.Mark Williams
Director of R&D
(919) 789-8880
williams@kymatech.com
Business Contact:
Edward Pupa
President and CEO
(919) 789-8880
epupa@kymatech.com
Research Institution:
n/a
Abstract
"Kyma Technologies has made homoepitaxial growth of GaN a reality using its 2" diameter GaN substrates. This program will develop the substrate preparation process for epitaxial growth of gallium nitride films. This will include mechanical andchemical-mechanical polishing as well as wet and dry etching. The main emphasis of the phase I effort will be on GaN surface polishing and removal of the damaged layer prior to epitaxial growth. Wafer preparation is one of the most important factors ingrowth of high quality GaN epitaxial thin films. Damage induced by polishing can have severe effects on the quality of epitaxial film growth. The crystal quality of MOCVD GaN thin films will be used as the response for the preparation techniques. Thisproject will utilize parallel efforts of materials development, epi fabrication and materials characterization. The initial focus in this program will be the improvement of the GaN epitaxial growth surface. The phase II will focus on optimization of thenitride layers in order to produce high quality optoelectronic and microelectronic devices, where the greatest interest for commercial and military based applications exists. The accomplishment of low-dislocation-density GaN material will increaselifetime and brightness in optoelectronic devices. Single crystal gallium nitride will be the future building block for many commercial devices. Low defect density gallium nitride films will benefit ma

* information listed above is at the time of submission.

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