Advanced Gallium Nitride Microelectronic Devices Produced on Gallium Nitride Substrates

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$70,000.00
Award Year:
2003
Program:
SBIR
Phase:
Phase I
Contract:
N0016403C6012
Award Id:
64002
Agency Tracking Number:
022-0633
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
KYMA TECHNOLOGIES, INC. (Currently Kyma Technologies)
8829 Midway West Road, Raleigh, NC, 27617
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
020080607
Principal Investigator:
Drew Hanser
Director of Business Deve
(919) 789-8880
hanser@kymatech.com
Business Contact:
Edward Pupa
President and CEO
(919) 789-8880
epupa@kymatech.com
Research Institution:
n/a
Abstract
This program will demonstrate high-performance GaN microelectronic devices for X-band radar applications by using novel device designs and single crystal gallium nitride substrates. FETs for power amplifiers will benefit from lower defects resulting fromgrowth on a native GaN substrate, improved device design, including features such as gate recess and passivation layers, and device cooling. The main goals of the Phase I research are to analyze technical issues and develop implementation plans forproduction of GaN devices with advanced device structures. Proof of concept efforts will include growth and fabrication of GaN FETs on GaN substrates. With these approaches and device improvements, advances in device efficiency, stability, and reliabilitywill be achieved. Phase II work will focus on the further development of devices and integrated power amplifier modules. GaN-based FET technology with high device efficiency, stability, and reliability will benefit commercial electronic applicationsthroughout several industries, including wireless communications infrastructure and mobile phones, commercial radar, and satellites. Demonstration of the applicability of GaN substrates in these applications will expand their implementation in othertechnological areas, such as improving the performance of GaN-based optoelectronic devices.

* information listed above is at the time of submission.

Agency Micro-sites


SBA logo

Department of Agriculture logo

Department of Commerce logo

Department of Defense logo

Department of Education logo

Department of Energy logo

Department of Health and Human Services logo

Department of Homeland Security logo

Department of Transportation logo

Enviromental Protection Agency logo

National Aeronautics and Space Administration logo

National Science Foundation logo
US Flag An Official Website of the United States Government