Advanced Gallium Nitride Microelectronic Devices Produced on Gallium Nitride Substrates

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N0016403C6012
Agency Tracking Number: 022-0633
Amount: $70,000.00
Phase: Phase I
Program: SBIR
Awards Year: 2003
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
8829 Midway West Road, Raleigh, NC, 27617
DUNS: 020080607
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Drew Hanser
 Director of Business Deve
 (919) 789-8880
Business Contact
 Edward Pupa
Title: President and CEO
Phone: (919) 789-8880
Research Institution
This program will demonstrate high-performance GaN microelectronic devices for X-band radar applications by using novel device designs and single crystal gallium nitride substrates. FETs for power amplifiers will benefit from lower defects resulting fromgrowth on a native GaN substrate, improved device design, including features such as gate recess and passivation layers, and device cooling. The main goals of the Phase I research are to analyze technical issues and develop implementation plans forproduction of GaN devices with advanced device structures. Proof of concept efforts will include growth and fabrication of GaN FETs on GaN substrates. With these approaches and device improvements, advances in device efficiency, stability, and reliabilitywill be achieved. Phase II work will focus on the further development of devices and integrated power amplifier modules. GaN-based FET technology with high device efficiency, stability, and reliability will benefit commercial electronic applicationsthroughout several industries, including wireless communications infrastructure and mobile phones, commercial radar, and satellites. Demonstration of the applicability of GaN substrates in these applications will expand their implementation in othertechnological areas, such as improving the performance of GaN-based optoelectronic devices.

* Information listed above is at the time of submission. *

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