Advanced Gallium Nitride Microelectronic Devices Produced on Gallium Nitride Substrates

Award Information
Agency:
Department of Defense
Branch:
Missile Defense Agency
Amount:
$750,000.00
Award Year:
2004
Program:
SBIR
Phase:
Phase II
Contract:
N00164-04-C-6066
Agency Tracking Number:
022-0633
Solicitation Year:
2002
Solicitation Topic Code:
MDA02-047
Solicitation Number:
2002.2
Small Business Information
KYMA TECHNOLOGIES, INC.
8829 Midway West Road, Raleigh, NC, 27617
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
020080607
Principal Investigator
 Drew Hanser
 Director of Research and
 (919) 789-8880
 hanser@kymatech.com
Business Contact
 Edward Pupa
Title: President and CEO
Phone: (919) 789-8880
Email: epupa@kymatech.com
Research Institution
N/A
Abstract
Kyma Technologies, Inc. will demonstrate high-performance gallium nitride (GaN) microelectronic devices for X-band radar applications using single crystal semi-insulating GaN substrates. FETs for power amplifiers will benefit from lower defects resulting from growth on a native GaN substrate. The thermal conductivity of the GaN substrates will be characterized and device structures will be modeled and simulated to evaluate the impact of the substrate thermal conductivity on the electrical performance of the device. With these approaches and device improvements, advances in device performance, efficiency, and reliability will be achieved.

* information listed above is at the time of submission.

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