Advanced Gallium Nitride Microelectronic Devices Produced on Gallium Nitride Substrates

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$750,000.00
Award Year:
2004
Program:
SBIR
Phase:
Phase II
Contract:
N00164-04-C-6066
Award Id:
64002
Agency Tracking Number:
022-0633
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
8829 Midway West Road, Raleigh, NC, 27617
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
020080607
Principal Investigator:
DrewHanser
Director of Research and
(919) 789-8880
hanser@kymatech.com
Business Contact:
EdwardPupa
President and CEO
(919) 789-8880
epupa@kymatech.com
Research Institute:
n/a
Abstract
Kyma Technologies, Inc. will demonstrate high-performance gallium nitride (GaN) microelectronic devices for X-band radar applications using single crystal semi-insulating GaN substrates. FETs for power amplifiers will benefit from lower defects resulting from growth on a native GaN substrate. The thermal conductivity of the GaN substrates will be characterized and device structures will be modeled and simulated to evaluate the impact of the substrate thermal conductivity on the electrical performance of the device. With these approaches and device improvements, advances in device performance, efficiency, and reliability will be achieved.

* information listed above is at the time of submission.

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