Advanced Gallium Nitride Microelectronic Devices Produced on Gallium Nitride Substrates

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N00164-04-C-6066
Agency Tracking Number: 022-0633
Amount: $750,000.00
Phase: Phase II
Program: SBIR
Awards Year: 2004
Solicitation Year: 2002
Solicitation Topic Code: MDA02-047
Solicitation Number: 2002.2
Small Business Information
8829 Midway West Road, Raleigh, NC, 27617
DUNS: 020080607
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Drew Hanser
 Director of Research and
 (919) 789-8880
Business Contact
 Edward Pupa
Title: President and CEO
Phone: (919) 789-8880
Research Institution
Kyma Technologies, Inc. will demonstrate high-performance gallium nitride (GaN) microelectronic devices for X-band radar applications using single crystal semi-insulating GaN substrates. FETs for power amplifiers will benefit from lower defects resulting from growth on a native GaN substrate. The thermal conductivity of the GaN substrates will be characterized and device structures will be modeled and simulated to evaluate the impact of the substrate thermal conductivity on the electrical performance of the device. With these approaches and device improvements, advances in device performance, efficiency, and reliability will be achieved.

* Information listed above is at the time of submission. *

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