Manufacturng Process for Production of Doped GaN Crystals

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$70,000.00
Award Year:
2003
Program:
SBIR
Phase:
Phase I
Contract:
F3361503M5434
Award Id:
64218
Agency Tracking Number:
031-1204
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
8829 Midway West Road, Raleigh, NC, 27617
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
020080607
Principal Investigator:
Drew Hanser
Director of Crystal Growt
(919) 789-8880
hanser@kymatech.com
Business Contact:
Edward Pupa
President and CEO
(919) 789-8880
epupa@kymatech.com
Research Institute:
n/a
Abstract
Kyma Technologies will use its proprietary manufacturing technique for growth of bulk GaN doped substrates. We propose to develop gallium nitride (GaN) substrates with n- and p- type dopants for device fabrication. Attempts to grow low defect densitygallium nitride (GaN) thin films on substrates such as sapphire and silicon carbide (SiC) have had limited success. As such, homoepitaxial GaN thin film growth is of great interest. GaN wafers manufactured by Kyma Technologies will be used as the seed forgrowing doped GaN crystals. Doped GaN wafers will be useful in developing various types of microelectronic and optoelectronic devices. The limiting factors in many high performance applications based on GaN and related materials can be attributeddirectly to material defects in epitaxially grown layers. The development of a low defect density doped GaN substrate will result in improved properties of epitaxial GaN films, and subsequently will improve the performance of GaN-based devices. Achievinglow defect density, free standing GaN layers will enable many of these technologies to be commercialized. Single crystal gallium nitride will be the future building block for many commercial devices. Low defect density gallium nitride films will benefitmany microelectronic and optoelectronic devices. This material will lead to the commercialization of blue lasers in data storage and solid state white LED lighting. Homoepitaxial growth of gallium nitride on single crystal gallium nitride substrates willresult in improved device performance such as increased lifetime and brightness in optoelectronics and increase power and frequency in microelectronic devices.

* information listed above is at the time of submission.

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