Development of 4 inch Semi-Insulating Gallium Nitride Substrates

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N00164-04-C-6055
Agency Tracking Number: B045-018-0295
Amount: $100,000.00
Phase: Phase I
Program: STTR
Awards Year: 2004
Solicitation Year: 2004
Solicitation Topic Code: MDA04-T018
Solicitation Number: N/A
Small Business Information
8829 Midway West Road, Raleigh, NC, 27617
DUNS: 020080607
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Mark Williams
 Director of GaN Wafering
 (919) 789-8880
Business Contact
 Edward Pupa
Title: President and CEO
Phone: (919) 789-8880
Research Institution
 Auburn University
 Minseo Park
 303 Allison Laboratory
Auburn, AL, 36849
 (334) 844-4270
 Nonprofit college or university
High-performance GaN-based devices, such as microwave transistors, laser diodes and light emitting diodes have been demonstrated on sapphire and silicon carbide substrates. Gallium nitride substrates are expected to further improve the performance of these devices due to close lattice and thermal expansion match with GaN-based device structures. The development of a low defect density semi insulating GaN substrate will result in improved properties of epitaxial GaN films, and subsequently will improve the performance of GaN-based devices. Moving to wafer sizes larger than 2" will also create lower cost opportunities through process scaling. This Phase I SBIR will develop 4" diameter semi insulating GaN substrates using a large area hydride vapor phase epitaxy (HVPE) system. Hydride vapor phase epitaxy has gained attention as a technique to grow high quality, free-standing bulk GaN materials for use as substrates. The HVPE technique has the advantages of a high growth rate (up to 0.5 mm/hr), relatively low cost, and demonstrated low defect densities (105 cm-2). In Phase II of this proposal we will complete GaN HVPE growth studies and proceed to develop low defect density 4" GaN substrates for commercialization.

* Information listed above is at the time of submission. *

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