High Electrical Efficiency GaN FETs for Innovative Radar/RF Sensors

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: W9113M-06-C-0064
Agency Tracking Number: 053-1629
Amount: $100,000.00
Phase: Phase I
Program: SBIR
Awards Year: 2006
Solicitation Year: 2005
Solicitation Topic Code: MDA05-035
Solicitation Number: 2005.3
Small Business Information
KYMA TECHNOLOGIES, INC.
8829 Midway West Road, Raleigh, NC, 27617
DUNS: 020080607
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Drew Hanser
 Chief Technology Officer
 (919) 789-8880
 hanser@kymatech.com
Business Contact
 Keith Evans
Title: Chief Executive Officer
Phone: (919) 789-8880
Email: evans@kymatech.com
Research Institution
N/A
Abstract
Improving efficiency and reliability of GaN-based FETs is paramount in enabling system insertion, both of which are limited by thermal effects and self heating in the devices. One factor limiting high voltage and high efficiency operation of GaN HEMTs is leakage current between the gate and drain at high drain bias. Pure screw dislocations arising from the lattice mismatch at the SiC substrate and thread through the GaN and AlGaN epitaxial layers have been identified as a path for reverse-bias leakage currents in GaN. The availability of a low dislocation density GaN substrate would address these issues by reducing the dislocation density to 105 cm-2 or lower. The proposed Phase I SBIR effort will work to identify key factors in improving the efficiency, of GaN-based FET devices for application in radar systems. This program will investigate the impact of defects in and thermal conductivity of device structures on SiC and bulk GaN substrates. Thermal models of GaN-based FETs on GaN substrates with comparisons to SiC substrate-based devices will be used along with thermal imaging measurements of FET structures to identify critical factors in improving the efficiency and reliability of GaN-based FETs for radar and RF sensors.

* information listed above is at the time of submission.

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