Manufacturing Process for Semi-insulating 4" Diameter GaN Substrates

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0006-06-C-7439
Agency Tracking Number: 053-1626
Amount: $100,000.00
Phase: Phase I
Program: SBIR
Awards Year: 2006
Solicitation Year: 2005
Solicitation Topic Code: MDA05-019
Solicitation Number: 2005.3
Small Business Information
8829 Midway West Road, Raleigh, NC, 27617
DUNS: 020080607
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Drew Hanser
 Chief Technical Officer
 (919) 789-8880
 hanser@kymatech.com
Business Contact
 Keith Evans
Title: Chief Executive Officer
Phone: (919) 789-8880
Email: evans@kymatech.com
Research Institution
N/A
Abstract
Large area semi-insulating GaN has the potential to impact the commercialization of many technologies such as power transistors, high frequency microwave amplifiers, and high-speed, high-power switching components. One of the limiting factors in many of these applications is the lack of commercially available large diameter substrates. This program will develop 4" diameter semi-insulating GaN substrates produced using a large area crystal growth reactor designed by Kyma Technologies. Applications of these substrates include high power transistors, high frequency power amplifiers, and high-speed, high-power switching components. The availability of high quality, highly uniform, semi-insulating GaN substrates could significantly improve the efficiency, lifetime and reliability of microwave power HEMTs. The overall objective of this proposal is to develop a manufacturing process for growing high quality, low defect density semi insulating GaN wafers up to 4" in diameter. These crystals will be grown to a sufficient thickness to produce freestanding GaN substrates by slicing wafers from the 4" boule. Applications of these substrates include high power transistors, high frequency power amplifiers, and high-speed, high-power switching components.

* Information listed above is at the time of submission. *

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