Manufacturing Process for Semi-insulating 4" Diameter GaN Substrates

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$100,000.00
Award Year:
2006
Program:
SBIR
Phase:
Phase I
Contract:
HQ0006-06-C-7439
Agency Tracking Number:
053-1626
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
KYMA TECHNOLOGIES, INC.
8829 Midway West Road, Raleigh, NC, 27617
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
020080607
Principal Investigator:
Drew Hanser
Chief Technical Officer
(919) 789-8880
hanser@kymatech.com
Business Contact:
Keith Evans
Chief Executive Officer
(919) 789-8880
evans@kymatech.com
Research Institution:
n/a
Abstract
Large area semi-insulating GaN has the potential to impact the commercialization of many technologies such as power transistors, high frequency microwave amplifiers, and high-speed, high-power switching components. One of the limiting factors in many of these applications is the lack of commercially available large diameter substrates. This program will develop 4" diameter semi-insulating GaN substrates produced using a large area crystal growth reactor designed by Kyma Technologies. Applications of these substrates include high power transistors, high frequency power amplifiers, and high-speed, high-power switching components. The availability of high quality, highly uniform, semi-insulating GaN substrates could significantly improve the efficiency, lifetime and reliability of microwave power HEMTs. The overall objective of this proposal is to develop a manufacturing process for growing high quality, low defect density semi insulating GaN wafers up to 4" in diameter. These crystals will be grown to a sufficient thickness to produce freestanding GaN substrates by slicing wafers from the 4" boule. Applications of these substrates include high power transistors, high frequency power amplifiers, and high-speed, high-power switching components.

* information listed above is at the time of submission.

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