Development of Seeded Crystal Growth Processes for Large Area Semi-insulating Gallium Nitride Substrates

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0006-07-C-7740
Agency Tracking Number: B063-035-0733
Amount: $100,000.00
Phase: Phase I
Program: SBIR
Awards Year: 2007
Solicitation Year: 2006
Solicitation Topic Code: MDA06-035
Solicitation Number: 2006.3
Small Business Information
8829 Midway West Road, Raleigh, NC, 27617
DUNS: 020080607
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Drew Hanser
 CTO & VP Business Development
 (919) 789-8880
 hanser@kymatech.com
Business Contact
 Keith Evans
Title: CEO & President
Phone: (919) 789-8880
Email: evans@kymatech.com
Research Institution
N/A
Abstract
Kyma Technologies will explore aspects of seeded bulk GaN crystal growth to develop manufacturing processes for large area, high quality, semi-insulating GaN substrates for RF applications. Preparation of GaN seeds and growth thereon, including surface cleaning, off-cut angle and direction, growth initiation, and defect control will be investigated. The use of novel seeds and growth conditions will be examined to expand the crystal size during growth. These substrates are expected to improve the performance and reliability of GaN-based power amplifiers for X-band radar applications.

* Information listed above is at the time of submission. *

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