Homoepitaxial GaN-based Devices for RF Electronics

Award Information
Agency:
Department of Defense
Amount:
$100,000.00
Program:
SBIR
Contract:
FA8650-07-M-1152
Solitcitation Year:
2007
Solicitation Number:
2007.1
Branch:
Air Force
Award Year:
2007
Phase:
Phase I
Agency Tracking Number:
F071-223-1964
Solicitation Topic Code:
AF071-223
Small Business Information
KYMA TECHNOLOGIES, INC.
8829 Midway West Road, Raleigh, NC, 27617
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
020080607
Principal Investigator
 Drew Hanser
 CTO & VP Business Development
 (919) 789-8880
 hanser@kymatech.com
Business Contact
 Keith Evans
Title: CEO & President
Phone: (919) 789-8880
Email: evans@kymatech.com
Research Institution
N/A
Abstract
In this Phase I proposal, Kyma Technologies will examine the epi properties and device performance of homoepitaxial GaN-based device layers grown on semi-insulating GaN substrates, targeting metrics that will help characterize performance at high frequency and correlating device performance with material properties. High frequency GaN devices will theoretically benefit from a lower dislocation density through improved thermal performance and improved dispersion performance. Device performance improvements will target high efficiency and bandwidth at high frequency, and the Phase I effort will assess the feasibility of the approach by measuring initial device performance and showing trends for high frequency device performance.

* information listed above is at the time of submission.

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