Homoepitaxial GaN-based Devices for RF Electronics

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA8650-07-M-1152
Agency Tracking Number: F071-223-1964
Amount: $100,000.00
Phase: Phase I
Program: SBIR
Awards Year: 2007
Solicitation Year: 2007
Solicitation Topic Code: AF071-223
Solicitation Number: 2007.1
Small Business Information
8829 Midway West Road, Raleigh, NC, 27617
DUNS: 020080607
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Drew Hanser
 CTO & VP Business Development
 (919) 789-8880
Business Contact
 Keith Evans
Title: CEO & President
Phone: (919) 789-8880
Email: evans@kymatech.com
Research Institution
In this Phase I proposal, Kyma Technologies will examine the epi properties and device performance of homoepitaxial GaN-based device layers grown on semi-insulating GaN substrates, targeting metrics that will help characterize performance at high frequency and correlating device performance with material properties. High frequency GaN devices will theoretically benefit from a lower dislocation density through improved thermal performance and improved dispersion performance. Device performance improvements will target high efficiency and bandwidth at high frequency, and the Phase I effort will assess the feasibility of the approach by measuring initial device performance and showing trends for high frequency device performance.

* Information listed above is at the time of submission. *

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