Homoepitaxial GaN-based Devices for RF Electronics

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$100,000.00
Award Year:
2007
Program:
SBIR
Phase:
Phase I
Contract:
FA8650-07-M-1152
Award Id:
82188
Agency Tracking Number:
F071-223-1964
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
8829 Midway West Road, Raleigh, NC, 27617
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
020080607
Principal Investigator:
DrewHanser
CTO & VP Business Development
(919) 789-8880
hanser@kymatech.com
Business Contact:
KeithEvans
CEO & President
(919) 789-8880
evans@kymatech.com
Research Institute:
n/a
Abstract
In this Phase I proposal, Kyma Technologies will examine the epi properties and device performance of homoepitaxial GaN-based device layers grown on semi-insulating GaN substrates, targeting metrics that will help characterize performance at high frequency and correlating device performance with material properties. High frequency GaN devices will theoretically benefit from a lower dislocation density through improved thermal performance and improved dispersion performance. Device performance improvements will target high efficiency and bandwidth at high frequency, and the Phase I effort will assess the feasibility of the approach by measuring initial device performance and showing trends for high frequency device performance.

* information listed above is at the time of submission.

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