High Electrical Efficiency GaN FETs for Innovative Radar/RF Sensors

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$1,000,000.00
Award Year:
2007
Program:
SBIR
Phase:
Phase II
Contract:
W9113M-07-C-0123
Award Id:
78445
Agency Tracking Number:
053-1629
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
8829 Midway West Road, Raleigh, NC, 27617
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
020080607
Principal Investigator:
DrewHanser
CTO & VP Business Develop
(919) 789-8880
hanser@kymatech.com
Business Contact:
KeithEvans
CEO & President
(919) 789-8880
evans@kymatech.com
Research Institute:
n/a
Abstract
Kyma Technologies proposes a research and development effort to fabricate and test GaN-based FETs on GaN and SiC substrates. AlGaN/GaN HEMT structures will be tested to identify the impact of defects on the thermal characteristics and degradation behavior in the devices in order to improve device performance and reliability. Thermal models of GaN-based FETs on GaN substrates with comparisons to SiC substrate-based devices will be used along with micro-Raman thermal measurements of FET structures to identify critical factors in improving the efficiency and reliability of GaN-based FETs for radar and RF sensors. At the end of Phase II an improved understanding of the thermal and defect mechanisms influencing the performance of high frequency GaN FETs will have been developed.

* information listed above is at the time of submission.

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