High Electrical Efficiency GaN FETs for Innovative Radar/RF Sensors

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: W9113M-07-C-0123
Agency Tracking Number: 053-1629
Amount: $1,000,000.00
Phase: Phase II
Program: SBIR
Awards Year: 2007
Solicitation Year: 2005
Solicitation Topic Code: MDA05-035
Solicitation Number: 2005.3
Small Business Information
8829 Midway West Road, Raleigh, NC, 27617
DUNS: 020080607
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Drew Hanser
 CTO & VP Business Develop
 (919) 789-8880
Business Contact
 Keith Evans
Title: CEO & President
Phone: (919) 789-8880
Email: evans@kymatech.com
Research Institution
Kyma Technologies proposes a research and development effort to fabricate and test GaN-based FETs on GaN and SiC substrates. AlGaN/GaN HEMT structures will be tested to identify the impact of defects on the thermal characteristics and degradation behavior in the devices in order to improve device performance and reliability. Thermal models of GaN-based FETs on GaN substrates with comparisons to SiC substrate-based devices will be used along with micro-Raman thermal measurements of FET structures to identify critical factors in improving the efficiency and reliability of GaN-based FETs for radar and RF sensors. At the end of Phase II an improved understanding of the thermal and defect mechanisms influencing the performance of high frequency GaN FETs will have been developed.

* Information listed above is at the time of submission. *

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