Manufacturing Process for Semi-insulating 4" Diameter GaN Substrates

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$749,990.00
Award Year:
2007
Program:
SBIR
Phase:
Phase II
Contract:
HQ0006-07-C-7621
Agency Tracking Number:
053-1526
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
KYMA TECHNOLOGIES, INC.
8829 Midway West Road, Raleigh, NC, 27617
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
020080607
Principal Investigator:
Drew Hanser
CTO & VP Business Develop
(919) 789-8880
hanser@kymatech.com
Business Contact:
Keith Evans
CEO & President
(919) 789-8880
evans@kymatech.com
Research Institution:
n/a
Abstract
The overall objective of this Phase II effort is to implement a HVPE crystal growth tool for large diameter GaN crystals suitable for 4" diameter substrates. Using this new crystal growth platform, Kyma will optimize its design and operation to develop a manufacturing process for growing high quality, low defect density semi-insulating GaN substrates. CFD modeling will be used extensively to identify the optimal system design and growth parameters. Bulk semi-insulating GaN substrates will be produced by slicing wafers from a 4" boule.

* information listed above is at the time of submission.

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