Development of Seeded Crystal Growth Processes for Large Area Semi-insulating Gallium Nitride Substrates

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: W9113M-08-C-0147
Agency Tracking Number: B063-035-0733
Amount: $999,993.00
Phase: Phase II
Program: SBIR
Awards Year: 2008
Solicitation Year: 2006
Solicitation Topic Code: MDA06-035
Solicitation Number: 2006.3
Small Business Information
8829 Midway West Road, Raleigh, NC, 27617
DUNS: 020080607
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Drew Hanser
 CTO & VP Business Develop
 (919) 789-8880
 hanser@kymatech.com
Business Contact
 Carole Davis
Title: Contract Administrator
Phone: (919) 789-8880
Email: davis@kymatech.com
Research Institution
N/A
Abstract
In this Phase II effort, Kyma will explore aspects of seeded bulk GaN crystal growth to develop manufacturing processes for large area, high quality, semi-insulating GaN substrates for RF applications. Optimization of several aspects of the growth process will be investigated to develop a process for high quality regrowth addressing known issues identified in the Phase I effort. Growth optimization will result in high quality crystals with the goal of obtaining multiple substrates with well-controlled material and electrical properties.

* Information listed above is at the time of submission. *

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