Electrically-Pumped III-Nitride Intersubband lasers

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: W31P4Q-09-C-0447
Agency Tracking Number: 08SB2-0764
Amount: $98,999.00
Phase: Phase I
Program: SBIR
Awards Year: 2009
Solicitation Year: 2008
Solicitation Topic Code: SB082-049
Solicitation Number: 2008.2
Small Business Information
8829 Midway West Road, Raleigh, NC, 27617
DUNS: 020080607
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Tanya Paskova
 Chief Scientist
 (919) 789-8880
 paskova@kymatech.com
Business Contact
 Carole Davis
Title: Contracts Administrator
Phone: (919) 789-8880
Email: davis@kymatech.com
Research Institution
N/A
Abstract
Kyma Technologies together with the two subcontractors at Princeton University and Lehigh University aim to develop III-Nitride QCL at near 1.55 µm based on native GaN substrates and strain-compensation heterostructures engineering. We intent to employ new approaches, aiming to overcome the challenges in realization intersubband emission in III-Nitride structures. High quality native GaN substrates with low dislocation density with both polar and nonpolar surface orientations will be considered. Optimization of surface polishing and surface off-cut orientation are expected to enhance the structural quality and interface smoothness of the device structures. In Phase I proposal we will design (Al,Ga)N/GaN device structures accounting for or excluding the polarization fields in the devices grown along polar or nonpolar directions, respectively. Also, design of strain-free AlInGaN/GaN device structure will be elaborated and analysis of limiting theoretical factors will be performed. Epitaxial growth of (Al,Ga)N/GaN MQW structures grown by MOCVD on bulk GaN substrates is intended with a demonstration of intersubband absorption at near 1.55 µm. We will characterize the structures and will analyze the limiting experimental factors involved in producing intersubband transitions. It will allow us to estimate the best approach towards realization of intersubband laser at 1.55 µm intended for Phase II program.

* Information listed above is at the time of submission. *

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