Advanced Nitride Heterostructures for X-Band GaN HEMTs

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$99,902.00
Award Year:
2009
Program:
SBIR
Phase:
Phase I
Contract:
W9113M-09-C-0124
Award Id:
91552
Agency Tracking Number:
B083-024-0198
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
8829 Midway West Road, Raleigh, NC, 27617
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
020080607
Principal Investigator:
TanyaPaskova
Chief Scientist
(919) 789-8880
paskova@kymatech.com
Business Contact:
CaroleDavis
Contracts Administrator
(919) 789-8880
davis@kymatech.com
Research Institute:
n/a
Abstract
Kyma Technologies together with the subcontractor at Virginia Commonwealth University, aim to develop high-performance AlInN/GaN based high electron mobility transistor (HEMT), operating in the X-band frequency region. We intent to employ a novel technical approach, which examines both large-scale semi-insulating GaN templates and high-quality semi-insulating native GaN substrates; benefits from optimization of device design by introducing additional spacer(s) and employs strain-compensation heterostructure engineering to enable the development ultra-high device performance. Phase I focuses on growth development of high-quality pseudomorphic AlInN/GaN strain-free heterostructures and detailed evaluation of material properties and lays the foundation for Phase II wherein ultra-high performance X-band HEMTs will be developed.

* information listed above is at the time of submission.

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