HVPE-grown InGaN Materials for Aggressive Cost Reduction of Solid State Lighting Technologies

Award Information
Agency:
Department of Defense
Amount:
$98,999.00
Program:
SBIR
Contract:
W31P4Q-09-C-0389
Solitcitation Year:
2008
Solicitation Number:
2008.2
Branch:
Defense Advanced Research Projects Agency
Award Year:
2009
Phase:
Phase I
Agency Tracking Number:
08SB2-0809
Solicitation Topic Code:
SB082-053
Small Business Information
Kyma Technologies, Inc.
8829 Midway West Road, Raleigh, NC, 27617
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
020080607
Principal Investigator
 Drew Hanser
 CTO & VP Business Development
 (919) 789-8880
 hanser@kymatech.com
Business Contact
 Carole Davis
Title: Contracts Administrator
Phone: (919) 789-8880
Email: davis@kymatech.com
Research Institution
N/A
Abstract
Kyma Technologies will develop InGaN growth technologies using the hydride vapor phase epitaxy (HVPE) process, and will combine this with a proven GaN epitaxial growth technology to enable aggressive cost reduction for InGaN-based devices. This approach will enable a reduction in the required MOCVD growth steps in the fabrication of LEDs for solid state lighting, leading to a significant reduction in the costs of epitaxy of the LED device structure. In Phase I, Kyma will demonstrate high quality InGaN-based epitaxial layers via HVPE using a novel HVPE growth platform.

* information listed above is at the time of submission.

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