HVPE-grown InGaN Materials for Aggressive Cost Reduction of Solid State Lighting Technologies

Award Information
Agency:
Department of Defense
Branch
Defense Advanced Research Projects Agency
Amount:
$98,999.00
Award Year:
2009
Program:
SBIR
Phase:
Phase I
Contract:
W31P4Q-09-C-0389
Award Id:
91832
Agency Tracking Number:
08SB2-0809
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
8829 Midway West Road, Raleigh, NC, 27617
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
020080607
Principal Investigator:
DrewHanser
CTO & VP Business Development
(919) 789-8880
hanser@kymatech.com
Business Contact:
CaroleDavis
Contracts Administrator
(919) 789-8880
davis@kymatech.com
Research Institute:
n/a
Abstract
Kyma Technologies will develop InGaN growth technologies using the hydride vapor phase epitaxy (HVPE) process, and will combine this with a proven GaN epitaxial growth technology to enable aggressive cost reduction for InGaN-based devices. This approach will enable a reduction in the required MOCVD growth steps in the fabrication of LEDs for solid state lighting, leading to a significant reduction in the costs of epitaxy of the LED device structure. In Phase I, Kyma will demonstrate high quality InGaN-based epitaxial layers via HVPE using a novel HVPE growth platform.

* information listed above is at the time of submission.

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