GaN-based Schottky Diodes for Power Converters in X-band Radar Power Supplies

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: W9113M-09-C-0126
Agency Tracking Number: B083-029-0493
Amount: $99,970.00
Phase: Phase I
Program: SBIR
Awards Year: 2009
Solicitation Year: 2008
Solicitation Topic Code: MDA08-029
Solicitation Number: 2008.3
Small Business Information
8829 Midway West Road, Raleigh, NC, 27617
DUNS: 020080607
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Drew Hanser
 Chief Technology Officer
 (919) 789-8880
 hanser@kymatech.com
Business Contact
 Carole Davis
Title: Contracts Administrator
Phone: (919) 789-8880
Email: davis@kymatech.com
Research Institution
N/A
Abstract
Kyma Technologies proposes to develop high performance GaN-based Schottky barrier diodes (SBDs) using high quality native GaN substrates. The inherent properties of the native substrate and the high quality epitaxy will enable novel technology advances beyond the current GaN SBD state of the art, and these devices will benefit power converters in X-band radar power supplies through fast, low-loss switching capabilities. Kyma will leverage existing partnerships with highly experienced research teams at North Carolina State University and Auburn University for device epitaxy and processing, respectively.

* Information listed above is at the time of submission. *

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