GaN-based Schottky Diodes for Power Converters in X-band Radar Power Supplies

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$99,970.00
Award Year:
2009
Program:
SBIR
Phase:
Phase I
Contract:
W9113M-09-C-0126
Award Id:
91567
Agency Tracking Number:
B083-029-0493
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
8829 Midway West Road, Raleigh, NC, 27617
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
020080607
Principal Investigator:
Drew Hanser
Chief Technology Officer
(919) 789-8880
hanser@kymatech.com
Business Contact:
Carole Davis
Contracts Administrator
(919) 789-8880
davis@kymatech.com
Research Institute:
n/a
Abstract
Kyma Technologies proposes to develop high performance GaN-based Schottky barrier diodes (SBDs) using high quality native GaN substrates. The inherent properties of the native substrate and the high quality epitaxy will enable novel technology advances beyond the current GaN SBD state of the art, and these devices will benefit power converters in X-band radar power supplies through fast, low-loss switching capabilities. Kyma will leverage existing partnerships with highly experienced research teams at North Carolina State University and Auburn University for device epitaxy and processing, respectively.

* information listed above is at the time of submission.

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