Development of GaN Substrates for High Power and M

Award Information
Agency: Department of Defense
Branch: Army
Contract: W911QX-10-C-0039
Agency Tracking Number: A092-045-1922
Amount: $108,920.00
Phase: Phase I
Program: SBIR
Awards Year: 2009
Solicitation Year: 2009
Solicitation Topic Code: A09-045
Solicitation Number: 2009.2
Small Business Information
8829 Midway West Road, Raleigh, NC, 27617
DUNS: 020080607
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Gregory Mulholland
 Director of Engineering
 (919) 789-8880
Business Contact
 Carole Davis
Title: Accounting and Govt Contracts
Phone: (919) 789-8880
Research Institution
Kyma Technologies proposes to document and model commonly observed GaN defect structures in device performance simulations to determine the acceptable level of defects to yield a Schottky diode appropriate for typical 600 V market specifications. Bulk GaN substrates have the potential to enable unprecedented GaN Schottky diode performance – better than Si and SiC devices – yet the bulk GaN materials must first be better understood and improved. By understanding which defects must be reduced or eliminated, we can understand the primary element in the critical path towards cost-effective high-yield high-performance Schottky diode device manufacturing. To such an end, Kyma has assembled a world class team of device and materials experts. In Phase I, a significant modeling effort will take place to determine the most important defects to reduce, mitigate or eliminate totally. Phase II will include a major device effort with the ultimate goal of producing device yields over a 2” diameter round wafer of greater than 50%.

* Information listed above is at the time of submission. *

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