Manufacturing Process for Semi-insulating 4" Diameter GaN Substrates

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0006-07-C-7621
Agency Tracking Number: 053-1626
Amount: $749,990.00
Phase: Phase II
Program: SBIR
Awards Year: 2007
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
8829 Midway West Road, Raleigh, NC, 27617
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Drew Hanser
 CTO & VP Business Develop
 (919) 789-8880
Business Contact
 Keith Evans
Title: CEO & President
Phone: (919) 789-8880
Research Institution
The overall objective of this Phase II effort is to implement a HVPE crystal growth tool for large diameter GaN crystals suitable for 4" diameter substrates. Using this new crystal growth platform, Kyma will optimize its design and operation to develop a manufacturing process for growing high quality, low defect density semi-insulating GaN substrates. CFD modeling will be used extensively to identify the optimal system design and growth parameters. Bulk semi-insulating GaN substrates will be produced by slicing wafers from a 4" boule.

* Information listed above is at the time of submission. *

Agency Micro-sites

SBA logo
Department of Agriculture logo
Department of Commerce logo
Department of Defense logo
Department of Education logo
Department of Energy logo
Department of Health and Human Services logo
Department of Homeland Security logo
Department of Transportation logo
Environmental Protection Agency logo
National Aeronautics and Space Administration logo
National Science Foundation logo
US Flag An Official Website of the United States Government