Manufacturing Process for Semi-insulating 4" Diameter GaN Substrates

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0006-07-C-7621
Agency Tracking Number: 053-1626
Amount: $749,990.00
Phase: Phase II
Program: SBIR
Awards Year: 2007
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
8829 Midway West Road, Raleigh, NC, 27617
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Drew Hanser
 CTO & VP Business Develop
 (919) 789-8880
 hanser@kymatech.com
Business Contact
 Keith Evans
Title: CEO & President
Phone: (919) 789-8880
Email: evans@kymatech.com
Research Institution
N/A
Abstract
The overall objective of this Phase II effort is to implement a HVPE crystal growth tool for large diameter GaN crystals suitable for 4" diameter substrates. Using this new crystal growth platform, Kyma will optimize its design and operation to develop a manufacturing process for growing high quality, low defect density semi-insulating GaN substrates. CFD modeling will be used extensively to identify the optimal system design and growth parameters. Bulk semi-insulating GaN substrates will be produced by slicing wafers from a 4" boule.

* Information listed above is at the time of submission. *

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