GROWTH OF EPITAXIAL OXIDE FILMS ON SILICON

Award Information
Agency:
National Science Foundation
Amount:
$50,000.00
Program:
SBIR
Contract:
N/A
Solitcitation Year:
N/A
Solicitation Number:
N/A
Branch:
N/A
Award Year:
1993
Phase:
Phase I
Agency Tracking Number:
21581
Solicitation Topic Code:
N/A
Small Business Information
Lawrence Semiconductor
2300 W Huntington Dr, Tempe, AZ, 85282
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
N/A
Principal Investigator
 Mcdonald Robinson
 (602) 438-2300
Business Contact
Phone: () -
Research Institution
N/A
Abstract
THE RESARCH DEMONSTRATES EPITAXIAL GROWTH, BY LASER ABLATION IN A UHV VACUUM SYSTEM OF HIGH QUALITY, INSULATING OXIDE FILMS ONTO HEATED SINGLE CRYSTAL SILICON SUBSTRATES, FOLLOWED BY CVD EPITAXIAL GROWTH OF SILICON ONTO THE INSULATING OXIXDE. THE RESEA CHERS ARE FOCUSING ON MGO, CEO2, AND PRO2 AS THE CANDIDATE EPITAXIAL INSULATING LAYERS. BOTH THE LASER ABLATED EPITAXIAL OXIDE FILMS AND THE CVD EPITAXIAL SILICON FILMS ARE CHARACTERIZED FOR CRYSTAL QUALITY AND ELECTRICAL PROPERTIES. CRYSTAL QUALITY IS MONITORED IN SITU DURING GROWTH BY REFLECTION HIGH ENERGY ELECTRON DIFFRACTION. THE GOAL FOR THIS WORK IS TO ENABLE A SILICON-ON-INSULATOR STRUCTURE IN WHICH THE INSULTOR IS GROWN EPITAXIALLY.

* information listed above is at the time of submission.

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